Allicdata Part #: | ZXMN10A07FTC-ND |
Manufacturer Part#: |
ZXMN10A07FTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 700MA SOT23-3 |
More Detail: | N-Channel 100V 700mA (Ta) 625mW (Ta) Surface Mount... |
DataSheet: | ZXMN10A07FTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 700mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 138pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZXMN10A07FTC is a N-channel MOSFET that belongs to the advanced trench MOSFET family, providing low on-resistance and excellent characteristics even in the hard switching application. This advanced MOSFET has many different features that make it suitable for a wide range of uses.
The ZXMN10A07FTC has a variety of application fields, including power management and circuit protection, automotive and industrial electrical, wireless communication and display, and battery power management. It also has a wide variety of classes, including Class A and B, PWM, and linear, making it suitable for a range of different uses. The device also has an integrated bootstrap diode, which ensures reliable operation in hard switching applications.
The ZXMN10A07FTC has an extremely low on-resistance rating of just 98 mΩ which makes it suitable for use in applications with both higher and lower voltages. As a result, its efficiency is extremely high, making it ideal for applications that require high levels of power efficiency. Its low gate charge and output capacitance also make it more suitable for use in high speed switching circuits. It also requires a low gate drive voltage of 4V.
The ZXMN10A07FTC’s working principle is similar to that of other MOSFETs. It is based on the principle of using a gate voltage to control the flow of current between the source and drain terminals. When a positive voltage is applied to the gate terminal, the voltage will pull electrons which cause an inversion layer to form in the silicon substrate between the source and drain terminals. This inversion layer acts as an electron channel or a switch, allowing current to flow between the two terminals. When the voltage is removed from the gate, the inversion layer is removed, thus shutting off the current.
The ZXMN10A07FTC is capable of handling high power levels, making it an excellent choice for applications that require power switching or power management. It is also reliable, cost-effective, and energy efficient. The device can also be used in hard switching applications thanks to its integrated bootstrap diode.
Overall, the ZXMN10A07FTC is a great choice for use in a wide variety of applications. Its low on-resistance rating, excellent characteristics, and integration of a bootstrap diode make it an excellent choice for applications in the areas of power management, circuit protection, and wireless communication and display. Its low gate drive voltage and output capacitance also make it more suitable for use in high speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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