ZXMN3A01ZTA Allicdata Electronics

ZXMN3A01ZTA Discrete Semiconductor Products

Allicdata Part #:

ZXMN3A01ZTADITR-ND

Manufacturer Part#:

ZXMN3A01ZTA

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 3.3A SOT89
More Detail: N-Channel 30V 2.2A (Ta) 970mW (Ta) Surface Mount S...
DataSheet: ZXMN3A01ZTA datasheetZXMN3A01ZTA Datasheet/PDF
Quantity: 2000
1000 +: $ 0.12317
Stock 2000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 970mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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ZXMN3A01ZTA is a type of field-effect transistor, a type of switch which differs from standard transistor switches due to its electrostatic field, rather than an electric current, controlling the state of the switch. A field-effect transistor is known as an unipolar transistor, meaning it has one terminal. ZXMN3A01ZTA is a single, thick-oxide MOSFET (Metal-oxide-semiconductor field-effect transistor). This type of switch has one gate terminal, with the source and drain terminals attached to the gate by a metal gate oxide layer. It was the first type of switch to use the metal-oxide layer in order to control field effect. The ZXMN3A01ZTA is a low-voltage device that is typically used in a variety of industries and applications that require redundant power sources, pulse switching, and adjustable current output.

The ZXMN3A01ZTA is a low-voltage, silicon-based FET (field-effect transistor) switch. Due to its MOSFET technology, it has a low on-resistance, high input impedance, and fast switching times. It is principally used as a switch, but can be utilized in many analog circuit applications such as amplifiers, buffers and current regulated loads.

The ZXMN3A01ZTA works by using the electrostatic field on the gate to control the current flowing through the source and drain terminals. Applying a positive voltage to the gate will induce an electrostatic field on the gate oxide layer which is strong enough to cause conduction in the channel between source and drain. Reversing the voltage will deplete the channel of electrons, causing the switch to open. The cut-off (do not-conduction) voltage is typically between -0.4V and 0V and the conduction typically begins around 0.4V and increases rapidly to saturation.

The ZXMN3A01ZTA offers a number of features that make it well-suited for a range of applications. The device can be used in a variety of high-frequency switching applications such as signal switching, pulse switching and pulse shaping. The low on-resistance of the ZXMN3A01ZTA gives it the ability to control and regulate current more precisely, making it beneficial in current-regulated power sources and applications involving adjustable current output. This low on-resistance also contributes to its ability to switch rapidly, making it ideal for use in high-speed signal switching. In addition, the high input impedance of the device allows it to operate safely and reliably in various rugged environments.

The ZXMN3A01ZTA is a versatile device with a number of applications and advantages. Its low on-resistance and high input impedance makes it suitable for a variety of high-frequency switching applications, while its low voltage operation makes it ideal for use in redundant power sources and current-regulated power sources. In addition, its fast switching times make it a good choice for pulse switching and signal switching. With its wide range of features, the ZXMN3A01ZTA is a versatile component that can be utilized in many different types of electronics.

The specific data is subject to PDF, and the above content is for reference

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