ZXMN6A11GTC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXMN6A11GTC is a N–Channel Enhancement Mode MOSFET from Diodes Incorporated. It is in a package type TO–252 and is suitable for surface mount applications. The device comes in a compact package reducing board space.

MOSFETs are three terminal semiconductor devices used for amplifying and switching electronic signals. The ZXMN6A11GTC is a single MOSFET device with N–Channel Enhancement Mode. The gates of a MOSFET are insulated from the current carrying channel by silicon nitride deposited over the channel. The gate voltage is used to control the drain–source current. This mode is known as enhancement mode. The ZXMN6A11GTC is a N–Channel Enhancement Mode MOSFET that can quickly switch between different output voltages.

The ZXMN6A11GTC is designed to reduce the number of components and to save board space. The device has a low resistive turn–off operation, making it suitable for high frequency applications. The device has high current handling capacity and wide range of operating temperatures from -40°C to +125°C.

The ZXMN6A11GTC has many uses in various applications. Some of its commonly used applications are for battery chargers, motor drives, PFC and DC-DC converters. The device can also be used as an electronic switch to provide an analog signal to control the motor and lamps. In addition, it can be used as a load switch in wireless charging circuits and in LCD monitors.

The working principle of the ZXMN6A11GTC is based on the principle of a MOSFET. When a voltage is applied to the gate of the device, the channel between the source and drain is closed and the device is turned off. This causes a decrease in the current flow between the source and drain and the gate input voltage is reduced. When the gate voltage is removed from the device, the drain and source are open, allowing a current to flow between them and turning the device on.

In conclusion, the ZXMN6A11GTC is a single N–Channel Enhancement Mode MOSFET with many applications in various circuits. It is a low power device with high current handling capacity and a wide range of operating temperatures. It is designed to save board space and is suitable for high frequency applications. The device can be used as a switch or an amplifier, and works on the principle of a MOSFET where the drain–source current is controlled by the gate voltage.

The specific data is subject to PDF, and the above content is for reference