ZXMN10A08E6TC Allicdata Electronics
Allicdata Part #:

ZXMN10A08E6TC-ND

Manufacturer Part#:

ZXMN10A08E6TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 1.5A SOT23-6
More Detail: N-Channel 100V 1.5A (Ta) 1.1W (Ta) Surface Mount S...
DataSheet: ZXMN10A08E6TC datasheetZXMN10A08E6TC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
FET Feature: --
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-26
Package / Case: SOT-23-6
Description

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A ZXMN10A08E6TC is a single, low-voltage N-Channel enhancement mode MOSFET. This device is designed for driving various electronic applications, such as mobile phone, laptop, automotive and white goods. It is suitable for high frequency, high speed and low distortion applications. The MOSFET has been designed as a medium channel device, which offers good power handling capability with a reasonably low gate charge. It also offers excellent switching performance with fast switching speeds. The ZXMN10A08E6TC can operate up to 24A DC.

The working principle of this device is based on the metal-oxide-semiconductor field-effect transistor (MOSFET). It utilizes the electrostatic force between the gate and the semiconductor substrate to control the electrical current flow between the source and the drain. The gate is insulated by a thin layer of oxide, which allows the gate to control the current flow between the source and the drain. The gate voltage causes the gate current to flow, which determines the gate resistance and the gate capacitance, which in turn determine the drain current. The gate voltage also controls the on-state and off-state resistance values of the MOSFET.

The MOSFET is widely used in various applications such as power management, motor control, audio amplifiers, switching power supplies, switching regulators, and light dimmers. In power management applications, the ZXMN10A08E6TC can be used to control the power distribution of a system and switch power circuits. In motor control applications, the ZXMN10A08E6TC can be used to control the speed and direction of a motor. It is also used in audio amplifiers to control the gain and in switching power supplies to control the power output.

In addition to these applications, the ZXMN10A08E6TC is also used in switching regulators and light dimmers. In a switching regulator, the MOSFET is used to control the voltage output of the regulator. In a light dimmer, the MOSFET is used to control the intensity of the light. The ZXMN10A08E6TC is also used in motor speed control and motor drive systems, as well as in data communications systems.

The ZXMN10A08E6TC is a reliable, low drain-source on-resistance device with fast switching speeds and high current handling capability. It is capable of handling up to 24A continuous current and has excellent thermal stability. The device also features low gate charge and output capacitance, making it an ideal choice for high speed and low distortion applications. It is suitable for a wide range of applications including automotive, mobile phone, laptop, and white goods. It is a versatile device that can be used for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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