ZXMN3A04DN8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3A04DN8TR-ND |
Manufacturer Part#: |
ZXMN3A04DN8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 30V 6.5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.5A 1.81W Sur... |
DataSheet: | ZXMN3A04DN8TA Datasheet/PDF |
Quantity: | 3500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 12.6A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 36.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1890pF @ 15V |
Power - Max: | 1.81W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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A ZXMN3A04DN8TA is a dual N–Channel Enhancement Mode Field Effect Transistor (FET). It houses two high-voltage FETs for high side and low-side switching with a maximum operating voltage of 500V. It is a Surface Mounted Device (SMD) that is specially designed to provide enhanced switching performance and power efficiency while reducing power loss.
As part of a larger FET family, the ZXMN3A04DN8TA part is an array designed with an integrated power MOSFET, which adds reliability and integrity to the overall performance of the device. This device can be used in power electronics applications as a digital switching device, such as protection circuits, an inrush current limiter, or as a main switch in AC/DC and DC/DC converters. It is also suitable for use as a high side switch in battery supply systems.
The ZXMN3A04DN8TA can switch at frequencies from dc to 100kHz, making it suitable for a wide variety of applications, such as motor drive, power management in industrial and automotive products, lighting systems, HVAC controls, and robotics. The advanced technologies featured on this type of device ensure improved EMI performance and a low switching loss, making it safe and reliable in the applications it services.
When discussing any FET device, it is important to understand the various working principles that make it function adequately. Basically, FETs use electromagnetic fields to create an electric field that is then controlled with a gate voltage to act as a form of voltage-controlled switch. Thus, with a higher gate voltage, more current will be allowed to flow in the channel, making it ideal for both switching and amplification applications.
More specifically, for the case of the ZXMN3A04DN8TA transistor, it works in an enhancement mode. This means that in order for the channel between the source and drain to conduct, a positive potential needs to exist on the gate. This will cause a depletion of the current in the channel from the source to the drain, thus allowing a current flow to occur. This device can handle up to 500V and a maximum drain current of 4A, making it an extremely efficient and powerful component.
All in all, the ZXMN3A04DN8TA is an ideal component for a variety of applications, including industrial, power management, lighting, HVAC and robotics. Its small size and improved electrons magnetic performance, make it an excellent choice to provide long-term reliability and efficiency without occupying too much space. Its use of the enhancement mode principle makes it a perfect choice for those that need to operate their circuits or devices in a safe and reliable way.
The specific data is subject to PDF, and the above content is for reference
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