ZXMN2F34MATA Discrete Semiconductor Products |
|
Allicdata Part #: | ZXMN2F34MATR-ND |
Manufacturer Part#: |
ZXMN2F34MATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 4A DFN-2X2 |
More Detail: | N-Channel 20V 4A (Ta) 1.35W (Ta) Surface Mount DFN... |
DataSheet: | ZXMN2F34MATA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 277pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.35W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN322 |
Package / Case: | 3-VDFN |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 2.5A, 4.5V |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ZXMN2F34MATA component is a single transistor circuit component that serves as a low-voltage device in a wide range of application fields and working principles. It is commonly used in applications such as power and analog interface, low-voltage digital logic, voltage-level conversions, linear and switching power control and sensing, and radio frequency power amplifiers. With its impressive performance, this component provides a cost-effective solution for a wide range of applications.This component is categorized as a single transistor, a type of Field-Effect Transistor (FET) that uses electric fields to generate and control an electric current, by switching between an off (open) and an on (closed) state. The dominant characteristics of this component include its low-voltage operation, low at-gate and reverse-gate capacitances, low-voltage sensitivity, fastest switching speeds, and very low on-state resistance levels. The ZXMN2F34MATA component works through the use of the MOSFET principle, a semiconductor device structure in which the output current is determined by the input voltage and the channel-length modulation. This component is a three-terminal, N-channel enhancement-mode device, which operates as a normally-on element and can be turned off when a negative voltage is applied to its gate terminal. At the same time, this component also has high avalanche-breakdown voltages and junction-temperature rating, while being able to withstand high-voltage transients.In addition, this component is also constructed of a heavily doped p-base and lightly doped n-buffer region and incorporates a field-oxide layer which prevents the channeling effect and helps limit the current-flow. This makes the ZXMN2F34MATA component especially suitable for high-frequency applications like audio-frequency power amplifier circuits and Class-D amplifiers. This unit is also capable of handling worst-case conditions such as high operating temperatures, high-speed switching, and high frequency operation. Due to its low-voltage operation, high-frequency operation, and its ability to switch quickly between states, the ZXMN2F34MATA component can be used as a low voltage device in a wide range of applications. This includes power, analog interface, low-voltage digital logic, voltage-level conversions, linear and switching-power control and sensing, and radio frequency power amplifiers. In addition, the high operating temperature, high-speed switching, and high-frequency operation capabilities of this component make it suitable for use in automotive applications and in applications involving switching power supplies, data acquisition, and power supplies.Overall, the ZXMN2F34MATA component is a highly versatile transistor component that can be used in a variety of applications. With its low-voltage operation, high-frequency operation, and quick switching speed capabilities, this component can be incorporated into a wide range of applications, from automotive applications to audio frequency power amplifiers. More importantly, this component is reliable and cost-effective, making it an attractive solution for cost-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ZXMN0545FFTA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 450V SOT23F-3... |
ZXMN6A09KTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 11.2A DPA... |
ZXMN3A02X8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.3A 8-MS... |
ZXMN3A02X8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.3A 8MSO... |
ZXMN3A02N8TA | Diodes Incor... | -- | 1000 | MOSFET N-CH 30V 5.3A 8-SO... |
ZXMN10A07FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 700MA SO... |
ZXMN10A11GTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.7A SOT... |
ZXMN10B08E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.6A SOT... |
ZXMN2A01E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.5A SOT2... |
ZXMN2A01FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.9A SOT2... |
ZXMN2A02X8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 6.2A 8-MS... |
ZXMN2A03E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 3.7A SOT2... |
ZXMN3A01E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 2.4A SOT2... |
ZXMN3A01FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.8A SOT2... |
ZXMN3A03E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.7A SOT2... |
ZXMN3B04N8TC | Diodes Incor... | -- | 1000 | MOSFET N-CH 30V 7.2A 8SOI... |
ZXMN6A07FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.2A SOT2... |
ZXMN6A08E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.8A SOT2... |
ZXMN6A11GTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 3.1A SOT2... |
ZXMNS3BM832TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 2A 8-MLPN... |
ZXMN4A06KTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 40V 7.2A DPAK... |
ZXMN6A25G | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 4.8A SOT2... |
ZXMN6A25K | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 7A DPAKN-... |
ZXMN2A05N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 12A 8-SOI... |
ZXMN3A05N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A 8-SOI... |
ZXMN6A10N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 7.6A 8-SO... |
ZXMN2F34MATA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4A DFN-2X... |
ZXMN3A02N8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 8SOICN-Ch... |
ZXMN10A08E6TA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
ZXMN10A11GTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 1.7A SOT... |
ZXMN2F30FHQTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4.9A SOT2... |
ZXMN10A08DN8TC | Diodes Incor... | -- | 1000 | MOSFET 2N-CH 100V 1.6A 8S... |
ZXMN2A04DN8TC | Diodes Incor... | -- | 1000 | MOSFET 2N-CH 20V 5.9A 8SO... |
ZXMN3A04DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6.5A 8SO... |
ZXMN3A06DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 4.9A 8SO... |
ZXMN3A06N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8SOICMos... |
ZXMN6A09DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 4.3A 8SO... |
ZXMN6A11DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2.5A 8SO... |
ZXMN2F30FHTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4.1A SOT2... |
ZXMN6A07FTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 1.2A SOT2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...