ZXMN6A07FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN6A07FTR-ND |
Manufacturer Part#: |
ZXMN6A07FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 1.2A SOT23-3 |
More Detail: | N-Channel 60V 1.2A (Ta) 625mW (Ta) Surface Mount S... |
DataSheet: | ZXMN6A07FTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 166pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZXMN6A07FTA is a general-purpose small-signal MOSFET (metal-oxide semiconductor field effect transistor) manufactured by Zetex. It is a single N-channel MOSFET with low on-state resistance and fast switching speeds. This makes it a suitable choice for a wide range of applications, including switching and amplifier circuits.
MOSFETs are semiconductor devices that consist of a source, a drain, and a gate. They work by controlling the conductive channel between the source and the drain with a voltage applied to the gate. When the voltage applied to the gate is higher than the source voltage, the N-type channel is created, allowing current to flow from the source to the drain. When the voltage applied to the gate is lower than the source voltage, the N-type channel is depleted, preventing current from flowing.
The ZXMN6A07FTA is designed for low-voltage applications. The on-state resistance for the device is as low as 7 mΩ, which makes it a suitable choice for switching and amplifier circuits. The MOSFET also has an excellent power handling capacity and a fast switching speed, which is suitable for high-speed applications. Additionally, the MOSFET has a low threshold voltage of 1.8 V, allowing it to be used in a wide range of applications. Furthermore, the ZXMN6A07FTA has an exceptionally low junction-source capacitance, making it suitable for high-frequency applications.
The ZXMN6A07FTA is ideal for a wide range of applications, including switching and amplifier circuits, as well as high-speed, high-frequency, and low-voltage applications. As it has an exceptionally low on-state resistance, it is able to switch quickly, allowing for fast response times. In addition, the MOSFET is capable of handling high voltages and currents, making it suitable for high-power applications. It is also ideal for high-frequency applications due to its low junction-source capacitance, as this reduces frequency-dependent losses.
The ZXMN6A07FTA is a versatile device that is suitable for a wide range of applications, including switching and amplifier circuits, as well as high-speed, high-frequency, and low-voltage applications. Its low on-state resistance, fast switching speed, and low threshold voltage make it a suitable choice for many applications. In addition, its excellent power handling capacity and low junction-source capacitance make it ideal for high-power and high-frequency applications. This makes it a powerful, reliable, and versatile choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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