ZXMN6A09DN8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN6A09DN8TR-ND |
Manufacturer Part#: |
ZXMN6A09DN8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 60V 4.3A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Sur... |
DataSheet: | ZXMN6A09DN8TA Datasheet/PDF |
Quantity: | 500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1407pF @ 40V |
Power - Max: | 1.25W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The ZXMN6A09DN8TA is a field effect transistor array that consists of two P-Channel and two N-Channel enhancement mode MOSFETs. It is manufactured as a surface mount device, with a maximum operating temperature of 175°C, and a power dissipation of 0.8W. The ZXMN6A09DN8TA is a 3-terminal device intended to be used as either a switch or amplifier.
P-channel MOSFETs are devices that are sensitive to the voltage applied to their gate terminal. When a negative voltage is applied, current can flow through the channel–from source to drain. N-channel MOSFETs, on the other hand, are sensitive to positive voltage. That is, when a positive voltage is applied to the gate, electrons are attracted and flow from the source to the drain.
The ZXMN6A09DN8TA is designed to be easily integrated into existing circuitry, and its low operating current and relatively high operating frequency makes it well suited for use in battery-powered devices, where energy efficiency is paramount. Another advantage of this device is that it can operate in certain power modes depending on the requirement – either as a low power active mode or as a low power standby mode.
In active mode, the ZXMN6A09DN8TA can be used as an amplifier or a switch. It can be used as an amplifier to increase either the current or the voltage needed for a given operation. When used as a switch, the device will either behave as a non-inverting gate or as an inverting gate, depending on the voltage applied at its gate terminal.
The ZXMN6A09DN8TA is a versatile device and can be used in a variety of applications, including signal conditioning, actuation and control, in automotive and consumer electronics, as well as industrial applications. As a signal conditioning device, it can be used to amplify, filter and convert signals into various forms, such as AC/DC and PWM. Additionally, as an actuator and control, it can be used in applications such as motor and solenoid control, or as a switch for power management and load switching.
In summary, the ZXMN6A09DN8TA is an efficient and versatile FET array that can be used as an amplifier, switch or signal conditioning device in a variety of applications. Its low gate input current and low operating voltage make it particularly suitable for energy-constrained applications such as automotive and consumer electronics. Additionally, its wide range of functionalities and ease of integration makes it widely applicable.
The specific data is subject to PDF, and the above content is for reference
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