ZXMN2A03E6TA Discrete Semiconductor Products

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ZXMN2A03E6TA is a N-channel Enhancement Mode Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Diodes Incorporated. This transistor belongs to a family of products that are designed to be used in a variety of applications such as AC Motor Control, Battery Management, Power Security and Power Supplies. Due to its low threshold voltage, high MOSFET channel, rugged construction, and fast switching speed, this product is ideal for a wide range of projects and applications.

The ZXMN2A03E6TA is a field-effect transistor, also known as a FET, with three terminals. It has an N-channeled construction, meaning the current flows from the drain to the source through an internal channel when it is switched on. The gate is the terminal used to control the flow of current from the source and the drain. This gate terminal is made up of an insulated gate with a metal gate capacitor.

The ZXMN2A03E6TA is rated at 50 volts and can handle a continuous current up to 2.5 amperes. When the device is off, the drain is disconnected from the source, and no current flows. When the gate is triggered or “charged” with a voltage, a gate field is created which encourages the flow of current from drain to source. The gate voltage required to turn the transistor on is known as the threshold voltage and the ZXMN2A03E6TA has a threshold voltage of 1.8 volts.

The ZXMN2A03E6TA can be used for a variety of applications such as motor control, power security, and power supplies. In motor control, the MOSFET can be used to regulate motor speed by controlling the amount of current that flows through the motor. It can also be used as a switch, opening and closing the circuit to control power flow. In power security, it can be used to protect sensitive parts from power overloads. And with its low threshold voltage, it can provide a very stable power supply for powering sensitive circuits.

The ZXMN2A03E6TA is a cost-effective solution for a variety of applications, offering low RDS (on) and low gate charge, which makes it ideal for applications requiring fast switching speeds. It is also capable of withstanding higher temperatures up to 175°C. Additionally, the ZXMN2A03E6TA is provided in a MSOP-8 surface-mount package, making it well designed for creating a high density PCB design.

In conclusion, the ZXMN2A03E6TA is an N-channel Enhancement Mode Power MOSFET, which is ideal for a wide range of applications, including motor control, power security, and power supply. It features a low threshold voltage, high MOSFET channel, rugged construction, and fast switching speed. With its low RDS (on) and low gate charge, as well as its MSOP-8 surface-mount package, this MOSFET is a great solution for creating a high-density PCB design.

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