Allicdata Part #: | 981-ZXMN2069FTA-CHP |
Manufacturer Part#: |
ZXMN2069FTA |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH SOT23-3 |
More Detail: | N-Channel Surface Mount SOT-23-3 |
DataSheet: | ZXMN2069FTA Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.09277 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ZXMN2069FTA is a N-Channel enhancement mode Field-Effect Transistor (FET) and falls in the category of single transistors. It has a wide range of applications and can operate with some of the toughest conditions. It is a versatile semiconductor which allows the use of very low power to achieve suitable switching and amplification.
Due to its structure, the ZXMN2069FTA offers better power efficiency and enhanced performance compared to other FETs. This makes it a better choice for applications such as high voltage amplifiers, low noise amplifiers, DC-DC converter circuits, load switches, etc.
Principle of Operation
The ZXMN2069FTA is an enhancement mode field-effect transistor and operates on the principle of conductance control. A gate terminal is used to control the flow of current through the transistor, by modulating the distance between the source and drain.
The gate terminal is connected to the field plate, which is located between the source and drain. In an enhancement mode FET, it is assumed that the gate voltage is initially below zero, which keeps the FET in an off state.
When the gate voltage is increased above the threshold voltage, an electric field gets created between the source and drain, resulting in the formation of an inversion layer. This layer allows the current to flow between the source and drain. The current flow is modulated by the gate voltage.
Advantages
The ZXMN2069FTA is an ideal device to use in demanding applications which require low noise and low power consumption. Some of the advantages of this FET are its low power consumption, low input capacitance, fast switching time and low on-resistance. These features make it ideal for use in many applications in the fields of high voltage amplifiers, motor control, DC-DC converters, switching circuits and more.
Applications
The ZXMN2069FTA is a suitable device to use in many applications. For instance, it can be used in high voltage amplifiers, as it is capable of amplifying signals with high levels of efficiency. It is also well-suited for low noise amplifiers due to its excellent noise characteristics. Additionally, it can be used in load switches, DC-DC converters and switching circuits, as it has a very fast switching time and low on-resistance.
It is also widely used in motor control applications as it is capable of regulating the speed and torque of a motor. It can be used to control the current flow to the motor and hence can be used for varying speed, acceleration and direction. The low input capacitance makes it a good choice for these applications as it ensures smooth control.
Conclusion
The ZXMN2069FTA is an enhancement mode field-effect transistor which has a wide range of applications and is a suitable device for applications which require low noise, low power consumption, fast switching and low input capacitance. Its advantages also make it ideal for use in motor control, switching circuits, DC-DC converters and high voltage amplifiers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ZXMN0545FFTA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 450V SOT23F-3... |
ZXMN6A09KTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 11.2A DPA... |
ZXMN3A02X8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.3A 8-MS... |
ZXMN3A02X8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.3A 8MSO... |
ZXMN3A02N8TA | Diodes Incor... | -- | 1000 | MOSFET N-CH 30V 5.3A 8-SO... |
ZXMN10A07FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 700MA SO... |
ZXMN10A11GTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.7A SOT... |
ZXMN10B08E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.6A SOT... |
ZXMN2A01E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.5A SOT2... |
ZXMN2A01FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.9A SOT2... |
ZXMN2A02X8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 6.2A 8-MS... |
ZXMN2A03E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 3.7A SOT2... |
ZXMN3A01E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 2.4A SOT2... |
ZXMN3A01FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.8A SOT2... |
ZXMN3A03E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.7A SOT2... |
ZXMN3B04N8TC | Diodes Incor... | -- | 1000 | MOSFET N-CH 30V 7.2A 8SOI... |
ZXMN6A07FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.2A SOT2... |
ZXMN6A08E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.8A SOT2... |
ZXMN6A11GTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 3.1A SOT2... |
ZXMNS3BM832TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 2A 8-MLPN... |
ZXMN4A06KTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 40V 7.2A DPAK... |
ZXMN6A25G | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 4.8A SOT2... |
ZXMN6A25K | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 7A DPAKN-... |
ZXMN2A05N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 12A 8-SOI... |
ZXMN3A05N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A 8-SOI... |
ZXMN6A10N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 7.6A 8-SO... |
ZXMN2F34MATA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4A DFN-2X... |
ZXMN3A02N8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 8SOICN-Ch... |
ZXMN10A08E6TA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
ZXMN10A11GTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 1.7A SOT... |
ZXMN2F30FHQTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4.9A SOT2... |
ZXMN10A08DN8TC | Diodes Incor... | -- | 1000 | MOSFET 2N-CH 100V 1.6A 8S... |
ZXMN2A04DN8TC | Diodes Incor... | -- | 1000 | MOSFET 2N-CH 20V 5.9A 8SO... |
ZXMN3A04DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6.5A 8SO... |
ZXMN3A06DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 4.9A 8SO... |
ZXMN3A06N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8SOICMos... |
ZXMN6A09DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 4.3A 8SO... |
ZXMN6A11DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2.5A 8SO... |
ZXMN2F30FHTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4.1A SOT2... |
ZXMN6A07FTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 1.2A SOT2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...