ZXMN3A03E6TA Allicdata Electronics

ZXMN3A03E6TA Discrete Semiconductor Products

Allicdata Part #:

ZXMN3A03E6TR-ND

Manufacturer Part#:

ZXMN3A03E6TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 3.7A SOT-23-6
More Detail: N-Channel 30V 3.7A (Ta) 1.1W (Ta) Surface Mount SO...
DataSheet: ZXMN3A03E6TA datasheetZXMN3A03E6TA Datasheet/PDF
Quantity: 18000
Stock 18000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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ZXMN3A03E6TA is an N-channel enhancement-mode vertical DMOS FET (V-DMOS). It is a low input capacitance and low gate source voltage vertical channel power MOSFET. This device is available in three Hall-Effect latch current ratings and four SOT-223 package options. The ZXMN3A03E6TA is suitable for a variety of applications, such as lighting control systems, HVAC, industrial process controllers, and solar panel controllers, as well as general purpose switching and linear applications.

The ZXMN3A03E6TA has a wide gate voltage operating range from 6 to 20V and an on-resistance tolerance of ±15%. The device is designed with a maximum drain current of 3A, a maximum drain-source voltage of 40V, and a maximum junction temperature of 150°C. The ZXMN3A03E6TA offers a high input impedance and low input capacitance, which is ideal for switching devices in applications with high speed switching requirements.

The ZXMN3A03E6TA operates on a principle of a voltage driven static field-effect transistor (FET). This transistor consists of three basic components: the source, gate, and drain. The source acts as the input and gate acts as the voltage source that controls the source current. The drain is connected to an output voltage, which is determined by the input voltage. When the input voltage is applied to the gate, the gate acts as a gate electrode and draws electrons from the source. This creates a channel from the source to the drain, allowing current to flow from the drain to the source.

The ZXMN3A03E6TA is designed for many different applications, making it a perfect choice for a variety of industrial and consumer electronics. It is ideal for use in low voltage industrial and consumer circuits, such as lighting control systems, HVAC, industrial process controllers, motor control circuits, automated process control applications, and solar panel controllers. The ZXMN3A03E6TA also has applications in switching and linear applications. It is a reliable, cost-effective solution for high performance power MOSFETs.

The ZXMN3A03E6TA is an excellent choice for those needing a versatile, low power, low cost power MOSFET. With its wide operating range, high input impedance, and low input capacitance, the ZXMN3A03E6TA is perfect for a variety of applications, making it ideal for industrial and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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