Allicdata Part #: | ZXMN3A14FQTA-ND |
Manufacturer Part#: |
ZXMN3A14FQTA |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 3.9A SOT23-3 |
More Detail: | N-Channel 30V 3.9A (Ta) 1.5W (Ta) Surface Mount SO... |
DataSheet: | ZXMN3A14FQTA Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19698 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 448pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZXMN3A14FQTA is a single N-Channel MOSFET transistor. This transistor is designed for high-voltage, low-amperage applications. It features an maximum operation voltage of 30V and a maximum on-state drain current of 17A. The size of the body is 5.8 millimeters by 5.6 millimeters.
A MOSFET, or metal oxide semiconductor field effect transistor, is a type of transistor. It is an active semiconductor device that works as an amplifier to increase or decrease the speed of the electrical signals. Unlike traditional bipolar transistors, MOSFETs do not require an external base current to operate. This makes them ideal for low power, high-frequency applications.
One of the main differences between a MOSFET and a traditional bipolar transistor is the gate voltage. In a MOSFET, the gate voltage is applied between the drain and source terminals, while in a bipolar transistor it is applied between the emitter and the base. This difference gives MOSFETs a much larger input impedance than traditional bipolar transistors and allows them to be used in high-power switching applications where current gain is not important.
The ZXMN3A14FQTA MOSFET transistor has an application field in power management systems and voltage regulation. It can be used to regulate the output voltage of power supplies or to control the speed of motors. It can also be used as an amplifier or in switching applications. For example, it can be used to switch a high voltage signal on and off.
The working principle of this MOSFET transistor is based on the fact that a thin conductive film is formed at the gate. When the gate voltage is applied to the transistor, a capacitance-induced electric field is created across the film. This electric field attracts or repulses the electrons and causes them to flow into or away from the gate. This results in a change in the transistor\'s drain voltage which can be used to control the operation of the device.
This MOSFET transistor is ideal for high-voltage and low-amperage applications because it has a low on-resistance and a high input impedance. It can be used in switching and amplifier applications because it does not require an external base current to operate. The ZXMN3A14FQTA MOSFET is an excellent choice for voltage regulation, power management, and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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