ZXMN6A25KTC Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN6A25KTCTR-ND |
Manufacturer Part#: |
ZXMN6A25KTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V DPAK |
More Detail: | N-Channel 60V 7A (Ta) 2.11W (Ta) Surface Mount TO-... |
DataSheet: | ZXMN6A25KTC Datasheet/PDF |
Quantity: | 12500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.11W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1063pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN6A25KTC is a single-ended N-Channel MOSFET that offers a wide variety of applications and benefits. This MOSFET is uniquely designed to be a power transistor, allowing it to deliver high speed switching that can effectively reduce switching loss. This makes it ideal for designing power circuits and consumer electronics.
The ZXMN6A25KTC is designed to offer lower on-state resistance in a wide range of temperatures and gate threshold voltages. This is achieved through a combination of a low Vth and low Rdson during both switching and static operation. The MOSFET features a high voltage breakdown of up to 500V and is capable of handling a current up to 8.4A. It also boasts an impressive power dissipation of up to 95W in a single package, making it well suited for high power applications.
The ZXMN6A25KTC operates on the principle of the MOSFET, which is a field-effect transistor. A MOSFET is composed of a semiconductor channel between two terminals (source and drain). The gate terminal is used to control the flow of current through the MOSFET. A voltage applied to the gate terminal will cause the current through the channel to be modified.
In the case of the ZXMN6A25KTC, the MOSFET is designed to be a voltage controlled device with N-channel conduction in order to provide a low on-state resistance. When a voltage is applied to the gate, it modulates the current through the channel, allowing the device to effectively control power. This makes the ZXMN6A25KTC an excellent choice for applications such as HVAC controls, motor drives, and automotive electronics.
The ZXMN6A25KTC is also uniquely designed to provide superior thermal performance, allowing it to handle large amounts of power at high frequencies without compromising performance. The device also features built-in diode protection, referred to as ESD protection, which ensures that the device is robust and able to withstand repetitive high power surges. This makes it well suited for applications that require high switching speed and improved reliability.
The ZXMN6A25KTC is an excellent choice for a wide variety of applications due to its low on-state resistance, high voltage breakdown, and superior thermal performance. The device offers a robust design with built-in diode protection, making it a great choice for applications that require high speed and reliable performance. With these features, the ZXMN6A25KTC is well suited for a variety of high powered and high speed applications.
The specific data is subject to PDF, and the above content is for reference
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