ZXMN7A11GTA Discrete Semiconductor Products

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ZXMN7A11GTA is an N-Channel Enhancement-mode Field-Effect Transistor (FET) from Diodes Incorporated. It is a low-on-resistance, low-capacitance, small surface mount multiple FETs package capable of providing very low power losses, making it very suitable for high-density applications. In this article, the application field and working principle of ZXMN7A11GTA are discussed.

Application Field

Due to its low on-resistance, small surface mount package and very low power losses, ZXMN7A11GTA is suitable for various applications, such as lighting, DC-DC converters, and power supply circuit. It also has excellent characteristics of high channel-matching accuracy, high channel-matching deviation, and relatively low static drain-source on-resistance.

For lighting applications, ZXMN7A11GTA can be used as a general purpose electronic switch to turn on and off certain amount of power, allowing more complex and efficient control of the total power supplied to the light source. It is capable of reducing the power losses when compared to a simple physical switch, allowing more efficient lighting solutions. It can also be used in DC-DC converters and power supply circuits to provide better control of DC-DC signals and reduce power loss.

Working Principle

ZXMN7A11GTA is a N-channel Enhancement-mode Field-Effect Transistor (FET), meaning that its operation is based on the electrostatic influence of an electric field on a conducting channel. This FET type does not require biasing and offers high input impedance.

When the gate voltage is lower than the threshold voltage, the device has a high resistance between the drain and the source, meaning that no current flows. When the gate voltage is raised to a value higher than the threshold voltage, the electric field creates a conducting channel between the drain and the source, thus allowing current to flow from drain to source. This then creates a voltage drop across the on-resistance of the transistor, and a load current is then set in the drain.

The output voltage of the device is determined by the drain current and the on-resistance. If the gate voltage is decreased, the conducting channel will be disrupted and an avalanche current will be generated, thus reducing the on-resistance. This will cause a high voltage drop across the transistor, thus reducing the output voltage of the device. In addition, ZXMN7A11GTA is protected from reverse breakdown due to the clamp diode inserted in series between the drain and the source.

Conclusion

In conclusion, ZXMN7A11GTA is a N-Channel Enhancement-mode Field-Effect Transistor from Diodes Incorporated with low-on-resistance, low-capacitance, and small surface mount multiple FETs package, making it very suitable for high-density applications such as lighting, DC-DC converters, and power supply circuits. Its operation is based on the electrostatic influence of an electric field on a conducting channel, and its output voltage is determined by the drain current and the on-resistance.

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