ZXMN3A04DN8TC Allicdata Electronics
Allicdata Part #:

ZXMN3A04DN8TC-ND

Manufacturer Part#:

ZXMN3A04DN8TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 30V 6.5A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 6.5A 1.81W Sur...
DataSheet: ZXMN3A04DN8TC datasheetZXMN3A04DN8TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.6A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Power - Max: 1.81W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The ZXMN3A04DN8TC is an array of logic-level enhancement-mode MOSFETs developed and manufactured by Zetex Semiconductors. This device has a two-terminal chip gate and a three-terminal semiconductor body or channel.

The ZXMN3A04DN8TC is suited for a wide range of applications, such as high-speed switching, motor control, analog switching, power supplies, LED lighting, and other power electronics-related applications. The device can be used in both single-ended and differential switching configurations.

Application Fields

The ZXMN3A04DN8TC can be used in a variety of applications, including power supplies, motor control, analog switching, and lighting applications. The device has the ability to switch high-frequency and high-load currents at very low power, making it suitable for applications that require high speed and low power. The device operates with a low on-state resistance and is capable of high frequency switching and high load current levels.

The device also has the ability to serve as a hot-swap switch, which can be used to protect sensitive electronic components from sudden power changes. It is also suitable for battery-powered applications due to its low quiescent current.

The ZXMN3A04DN8TC is suitable for motor control applications in automotive and commercial industries. It can be used to drive large motors and switch loads, providing a reliable and robust way of controlling loads. The device also finds use in wired and wireless communication, such as cellular systems, as it can provide fast switching and low power.

Working Principle

The ZXMN3A04DN8TC uses a gate, source, and drain to form an enhancement-mode MOSFET. The gate is connected to the gate terminal of the chip, and the source and drain are connected to the drain and source terminals, respectively. When voltage is applied to the gate, it creates a channel between the two terminals, and current begins to flow from the source to the drain.

The device can be used as an enhancement-mode switch, meaning it operates as an open circuit until a minimum gate voltage is applied to turn it on. The device can switch between its on and off states quite quickly, which makes it suitable for fast switching applications.

The ZXMN3A04DN8TC is also capable of providing with PWM operation. This is useful when operating with varying loads, and the device can be configured to provide both low and high side switching. The device can also be used to control the speed of motors, allowing smooth and efficient control over them.

The device also features two built-in ESD protection diodes, which are connected between the drain and source terminals. These diodes can protect the device from high voltage surges and electrostatic discharges. This makes the device suitable for a wide range of applications.

In summary, the ZXMN3A04DN8TC is a two-terminal logic-level enhancement-mode MOSFET that can be used for a wide range of applications, such as high-speed switching, motor control, analog switching, power supplies, LED lighting, and other power electronics-related applications. The device operates with a low on-state resistance and is capable of high frequency switching and high load current levels. The device has the ability to serve as a hot-swap switch and is also suitable for battery-powered applications due to its low quiescent current.

The specific data is subject to PDF, and the above content is for reference

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