ZXMN3A05N8TA Allicdata Electronics
Allicdata Part #:

ZXMN3A05N8DKR-ND

Manufacturer Part#:

ZXMN3A05N8TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 12A 8-SOIC
More Detail: N-Channel 30V Surface Mount 8-SO
DataSheet: ZXMN3A05N8TA datasheetZXMN3A05N8TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Digi-Reel® 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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The ZXMN3A05N8TA, also referred to as a MOSFET, is a type of Field Effect Transistor (FET). It is one of the single type of MOSFETs and is a special kind of transistor that has been designed for certain applications. The ZXMN3A05N8TA can be used for a range of applications and has a specific working principle.

The ZXMN3A05N8TA is an enhancement-type MOSFET, meaning it is designed with a higher voltage rating than the standard FETs. The device features an avalanche rating of 3A and an on-state resistance of 5 Ohms. The device is also small and lightweight, making it ideal for high density applications. The ZXMN3A05N8TA is suitable for a variety of applications, which include controlling the speed of motors, switching digital signals, and voltage regulation.

The ZXMN3A05N8TA works by relying on the principles of capacitance and current in order to control the switching of the MOSFET. The device contains a gate input which is used to control the flow of charge between the source and the drain. When the gate is activated, it creates an electric field which increases the capacitance between the gate and the source and drain, allowing a greater capacitance of electrons to flow between the source and the drain. This creates an on state, meaning the current will flow through the device. When the gate is deactivated, the electric field is reduced, decreasing the capacitance of electrons to flow, thus creating an off state, meaning the device is off and no current will flow through it.

The ZXMN3A05N8TA has various advantages, such as its small size, high voltage ratings, and enhanced on-state resistance. The device is also highly reliable and offers fast switching speeds, which make it suitable for high speed applications. The device is also easy to use and does not require complicated circuitry to operate.

The ZXMN3A05N8TA is a versatile component and is used in a variety of industries. It is commonly used in the automotive and industrial sectors, as well as the medical and consumer markets. The device is used to control the speed of motors, switch digital signals, and provide voltage regulation.

The ZXMN3A05N8TA can be used in combination with other components in a design. For example, it can be used as a buffer to protect against spontaneous switching. It can also be used in combination with other MOSFETs to create complex switching circuits. The device can also be used as an amplifier due to its low capacitance.

In conclusion, the ZXMN3A05N8TA is a single type of MOSFET. It is small, lightweight, and offers enhanced voltage ratings, making it suitable for high density applications. The device is also highly reliable and offers fast switching speeds, which make it suitable for a variety of applications. The ZXMN3A05N8TA works by relying on the principles of capacitance and current. It can also be used as a buffer, amplifier, or as part of a more complex switching circuit.

The specific data is subject to PDF, and the above content is for reference

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