ZXMN4A06KTC Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17.1nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	827pF @ 20V
FET Feature:	--
Power Dissipation (Max):	2.15W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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Table of Contents

Table of Contents

• Introduction
• Application Field of ZXMN4A06KTC
• Working Principle of ZXMN4A06KTC
• Conclusion
• References

Introduction

A ZXMN4A06KTC is a 6.0A and 60V N-Channel enhancement mode MOSFET manufactured by Zetex Semiconductors. It is constructed using an advanced trench MOSFET technology. It has superior switching performance, low on-state resistance and fast switching capabilities, making it a desirable choice for a wide range of applications. In this article, we will first discuss the application field of the ZXMN4A06KTC, followed by its working principle.

Application Field of ZXMN4A06KTC

The ZXMN4A06KTC MOSFET is mainly used in power switching circuits, particularly in switching supplies and DC-DC converters. It can also be used in high-frequency switching applications, as well as automotive and industrial power applications.Due to its superior switching performance, G-type ZXMN4A06KTC MOSFET is often used as a linear replacement for a bipolar solution. The high speed switching capabilities allow for reduced losses due to the use of fewer components. This makes the ZXMN4A06KTC MOSFET a suitable solution for high efficiency applications.Furthermore, due to its robust structure and high level of stability, the ZXMN4A06KTC MOSFET can be used in a wide range of temperatures, ranging from -55°C to +150°C. This broad operating temperature range makes the ZXMN4A06KTC MOSFET an ideal choice for automotive, industrial, and medical applications.

Working Principle of ZXMN4A06KTC

At its most basic level, the ZXMN4A06KTC is a transistor. It consists of three terminals – the gate, drain, and source. The gate is the control terminal that determines the device operation. When a signal is applied to the gate, this causes a change in the channel conductivity between the drain and source.The ZXMN4A06KTC MOSFET is a depletion mode device, meaning that it is off when no signal is applied to the gate. When a positive voltage is applied to the gate, this causes the depletion region to decrease, thus allowing current flowing from drain to source. Due to the high level of conductivity, the device can be switched on and off quickly.The ZXMN4A06KTC has an excellent on-state resistance, meaning it has low power losses. Additionally, the device has a high frequency drive capability and fast switching speeds, making it suitable for applications such as AC and DC motor control, power supply applications, and high frequency switching.

Conclusion

In conclusion, the ZXMN4A06KTC is an N-Channel enhancement mode MOSFET that has excellent switching performance, low on-state resistance, and fast switching capabilities. It is suitable for a wide range of applications, such as power switching circuits, switching supplies and DC-DC converters, and high-frequency switching applications. It also has a robust structure and high level of stability, allowing it to operate over a wide range of temperatures.

References

Zetex Semiconductors. (n.d.). ZXMN4A06KTC. Retrieved May 10, 2021, from https://www.zetex.com/products/products-detail.php?prod=ZXMN4A06KTCMouser Electronics. (n.d.). Zetex ZXMN4A06KTC MOSFET Transistors - FETs, MOSFETs - Single. Retrieved May 10, 2021, from https://www.mouser.com/datasheet/2/307/mouserze-879553.pdf

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