Allicdata Part #: | ZXMN2A02X8TC-ND |
Manufacturer Part#: |
ZXMN2A02X8TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 6.2A 8-MSOP |
More Detail: | N-Channel 20V 6.2A (Ta) 1.1W (Ta) Surface Mount 8-... |
DataSheet: | ZXMN2A02X8TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 11A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18.6nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-MSOP |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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The ZXMN2A02X8TC is a type of single transistor FET and is used to control power in a number of different electronic applications. It is one of the most popular types of field-effect transistors due to its relatively low cost, high power efficiency and excellent switching performance.
This kind of FET is a silicon technology that provides excellent performance and low on-resistance combined with low on-capacitance. It has a low threshold voltage of 0.4 Volts, resulting in good characterictics for operating at frequencies above 1 MHz. It is also highly efficient, capable of working with both 3-volt and 5-volt supplies.
The ZXMN2A02X8TC is an N-channel device, which means that it is normally off, unless a negative-going gate voltage is applied. This causes a current to flow through the channel and allows current to flow between the source and drain. A larger negative gate voltage increases the current flow as well, up to the device\'s maximum current rating. Because the gate voltage can be used to control the amount of current, this makes this kind of FET well suited for use as a high-power switch.
In addition to its switching behavior, the ZXMN2A02X8TC has a number of other useful features. It has low on-state resistance, meaning that it has low power dissipation and can be used for much higher power levels than other FETs. It also has a high off-state breakdown voltage, meaning that it can withstand much higher voltages without damage. Finally, it has low gate induced drain leakage, meaning that it has minimized power loss when in the off-state.
The ZXMN2A02X8TC can be used in a number of applications, such as power management, digital and analog design, LED drivers, audio amplifiers, and motor and motor control applications. In these applications, it can be used to provide efficient and precise control over power. For example, it can be used to enable energy-saving features in devices, such as laptops and cell phones, reduce unnecessary power consumption and improve overall system efficiency.
The ZXMN2A02X8TC is a highly efficient and reliable transistor FET, thanks to its low power consumption and excellent switching performance. Its versatility and ease of use make it a popular choice for a wide range of applications, from power management to LED drivers to audio amplifiers. In addition, its relatively low cost makes it a good choice for projects where cost is a major factor.
The specific data is subject to PDF, and the above content is for reference
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