ZXMN10A08E6TA Discrete Semiconductor Products

Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	250 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7.7nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	405pF @ 50V
FET Feature:	--
Power Dissipation (Max):	1.1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-26
Package / Case:	SOT-23-6
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)

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The ZXMN10A08E6TA is a single-gate MOSFET developed by Zetex Semiconductors. It is used in a wide range of applications, such as level shifting, buffer, amplifier, and RF switching.The ZXMN10A08E6TA is a low-voltage, single-gate MOSFET designed for low-voltage applications. The operating voltage range of the MOSFET is 5V to 11V, with a maximum drain current of 10A. It has an on-resistance of 8.6 mΩ and a low drain-gate capacitance of 110 pF. The ZXMN10A08E6TA provides excellent power efficiency and fast switching speeds. It has a low RON (gate resistance) of 6.2mΩ, which increases its efficiency. It also has a low reverse transfer capacitance of just 90pF. The ZXMN10A08E6TA is a P-channel device which can be used for level shifting and other related applications. It is designed to operate in environments where a voltage range of 5V to 11V is required. It is also used in low-voltage power supplies, buffer circuits, and RF switching. The ZXMN10A08E6TA MOSFET works on the principle of a metal-oxide-semiconductor field-effect transistor (MOSFET). It has three terminals: Gate (G), Drain (D) and Source (S). The gate terminal is responsible for controlling the flow of current between the drain and source. When the gate is at a negative voltage with respect to the drain, the transistor is in the cut-off state, and no current flows between the drain and source. When the gate is at a positive voltage with respect to the drain, the drain-source path is enabled, and current will flow from drain to source.To achieve the desired operating state, a gate voltage is applied between Gate and Source (VGS) while a voltage is applied between Drain and Source (VDS). When the VGS is lower than the threshold voltage (VTH), the channel will be in a cut-off state and no current will flow between Drain and Source. When the VGS reaches VTH, the MOSFET starts to conduct, and the current flow increases linearly as the VGS increases, until it reaches the drain-source voltage (VDS). The channel will then become saturated, and the current will remain constant as long as the VGS is greater than VTH.The ZXMN10A08E6TA is a robust, low-voltage device which provides excellent power efficiency and fast switching speeds. It is used in level shifting and buffer applications, as well as RF switching and power supplies. Its low RON, low capacitance, and low-voltage operation make it a versatile and reliable choice for a wide range of applications.

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