ZXMN6A25K Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN6A25KTR-ND |
Manufacturer Part#: |
ZXMN6A25K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 7A DPAK |
More Detail: | N-Channel 60V 7A (Ta) 2.11W (Ta) Surface Mount TO-... |
DataSheet: | ZXMN6A25K Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20.4nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1063pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2.11W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The ZXMN6A25K is a single 4V-gate low voltage MOSFET designed specifically for low voltage applications. It features a break-down voltage rating of 25V and a maximum drain current of 48A, making it ideal for power-on/off, load changes, and low noise switching.
This MOSFET is a field effect transistor (FET), which means it is capable of acting as a voltage-variable resistor, a current-variable resistor, or a switch. At low power levels, FETs typically act as switches, ensuring that, when voltage is applied to the gate of the device, the channel is turned on and current is allowed to flow from the drain to the source.
The ZXMN6A25K FET offers a unique design feature, the integrated four-volt gate. This gate can be used as a built-in resistor, allowing for more flexibility in applications where either voltage or current needs to be controlled. This gate helps reduce the noise induced by switching on and off the device, and improves overall efficiency.
The ZXMN6A25K is designed to work with fast switching input signals, making it ideal for digital control applications such as power supply design, power management, and remote control. It is also suitable for applications involving lower frequency signals such as analogue audio amplifiers, mixers, and guitar amplifiers.
The ZXMN6A25K is also designed to be used in high frequency switching applications, as well as applications involving high power surges. It is designed to handle high temperatures, up to 175 °C, and has a high efficiency rating.
The ZXMN6A25K MOSFET has a wide range of uses because of its flexibility. It has been used for many applications in consumer and industrial electronics, including automotive, telecommunications, consumer packaging, and data storage applications.
The ZXMN6A25K is an ideal choice for applications requiring high performance and reliability. It is fast switching, and has a relatively low drain-source on-resistance. Its four-volt gate voltage is also beneficial, as it helps to reduce noise when switching on and off the device.
In conclusion, the ZXMN6A25K is a single 4V-gate low voltage MOSFET designed specifically for low voltage applications. Its break down voltage rating of 25V, maximum drain current of 48A, and four-volt gate voltage make it ideal for digital control applications and high frequency switching applications. Its wide array of uses makes it a popular choice in consumer and industrial electronic applications.
The specific data is subject to PDF, and the above content is for reference
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