ZXMN6A11DN8TA Allicdata Electronics

ZXMN6A11DN8TA Discrete Semiconductor Products

Allicdata Part #:

ZXMN6A11DN8TR-ND

Manufacturer Part#:

ZXMN6A11DN8TA

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 2.5A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 2.5A 1.8W Surf...
DataSheet: ZXMN6A11DN8TA datasheetZXMN6A11DN8TA Datasheet/PDF
Quantity: 5000
1 +: $ 0.36000
10 +: $ 0.34920
100 +: $ 0.34200
1000 +: $ 0.33480
10000 +: $ 0.32400
Stock 5000Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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ZXMN6A11DN8TA Application Field and Working Principle

The ZXMN6A11DN8TA is a MOS Field Effect Transistor (MOSFET) array designed for high-speed switching applications. It is designed to provide high-speed, low-power operation over a wide range of operating conditions. The ZXMN6A11DN8TA is designed to operate in high-speed logic circuits, such as Pulse Width Modulators, Bus Switching, Frequency Synthesizers, Clock Drivers, and Data Drivers. It is also suitable for use in other applications where low-power operation is required.

Features

  • Low on-state resistance
  • Low input capacitance
  • Low power dissipation
  • Fail-safe features
  • Low-frequency oscillations
  • High-speed switching
  • High reliability

Working Principle

The ZXMN6A11DN8TA is an array of Field Effect Transistors (FETs). A FET is an electronic device consisting of an N-type and a P-type semiconductor material connected together in a single transistor. The N-type material is connected to a source, while the P-type material is connected to a gate. When the gate voltage is increased, the FET behaves like a switch, and the current is allowed to flow through the source and drain in one direction only. The ZXMN6A11DN8TA is designed with a low on-state resistance and a low input capacitance, which allows for high-speed switching and low power dissipation.

The ZXMN6A11DN8TA is also designed with fail-safe features to minimize the effects of static electricity and EMI noise. The array also has a low-frequency oscillator built in, which helps to reduce power dissipation and reduce noise in the circuit.Finally, the ZXMN6A11DN8TA is designed for high-speed operation, with a maximum switching frequency of 3 GHz.

Conclusion

The ZXMN6A11DN8TA is a MOSFET array designed for high-speed switching applications, with a low on-state resistance, low input capacitance, low power dissipation, and high-speed switching. It is also designed with fail-safe features and a low-frequency oscillator to reduce power dissipation and noise. The ZXMN6A11DN8TA is suitable for use in a wide range of high-speed logic circuits and other applications requiring low-power operation.

The specific data is subject to PDF, and the above content is for reference

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