ZXMN6A11DN8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN6A11DN8TR-ND |
Manufacturer Part#: |
ZXMN6A11DN8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 60V 2.5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 2.5A 1.8W Surf... |
DataSheet: | ZXMN6A11DN8TA Datasheet/PDF |
Quantity: | 5000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 5.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 40V |
Power - Max: | 1.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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ZXMN6A11DN8TA Application Field and Working Principle
The ZXMN6A11DN8TA is a MOS Field Effect Transistor (MOSFET) array designed for high-speed switching applications. It is designed to provide high-speed, low-power operation over a wide range of operating conditions. The ZXMN6A11DN8TA is designed to operate in high-speed logic circuits, such as Pulse Width Modulators, Bus Switching, Frequency Synthesizers, Clock Drivers, and Data Drivers. It is also suitable for use in other applications where low-power operation is required.
Features
- Low on-state resistance
- Low input capacitance
- Low power dissipation
- Fail-safe features
- Low-frequency oscillations
- High-speed switching
- High reliability
Working Principle
The ZXMN6A11DN8TA is an array of Field Effect Transistors (FETs). A FET is an electronic device consisting of an N-type and a P-type semiconductor material connected together in a single transistor. The N-type material is connected to a source, while the P-type material is connected to a gate. When the gate voltage is increased, the FET behaves like a switch, and the current is allowed to flow through the source and drain in one direction only. The ZXMN6A11DN8TA is designed with a low on-state resistance and a low input capacitance, which allows for high-speed switching and low power dissipation.
The ZXMN6A11DN8TA is also designed with fail-safe features to minimize the effects of static electricity and EMI noise. The array also has a low-frequency oscillator built in, which helps to reduce power dissipation and reduce noise in the circuit.Finally, the ZXMN6A11DN8TA is designed for high-speed operation, with a maximum switching frequency of 3 GHz.
Conclusion
The ZXMN6A11DN8TA is a MOSFET array designed for high-speed switching applications, with a low on-state resistance, low input capacitance, low power dissipation, and high-speed switching. It is also designed with fail-safe features and a low-frequency oscillator to reduce power dissipation and noise. The ZXMN6A11DN8TA is suitable for use in a wide range of high-speed logic circuits and other applications requiring low-power operation.
The specific data is subject to PDF, and the above content is for reference
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