2SK327700L

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	U-G1
Supplier Device Package:	U-G1
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1W (Ta), 10W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	170pF @ 20V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	1.7 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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2SK327700L Application Field and Working PrincipleThe 2SK327700L is a single MOSFET transistor with a high performance, small size, and excellent surface mount characteristics. Developed by Hitachi Semiconductor and Japan Electrical Industry Association (JEIA) for portable equipment and other applications, the 2SK327700L is ideal for applications where size, weight, and power consumption are concerns. It is typically used in mobile devices, automotive devices, and industrial equipment.The 2SK327700L is available in a compact and low power package with a height of 2.2 mm and a width of 2.4 mm. It produces extremely low leakage current and is capable of high speed switching. The device is designed to handle high frequency switching, achieving a performance of 200MHz with a maximum operating temperature of 150°C. It is also designed to have high power efficiency, reducing power supply interference and power dissipation.The 2SK327700L is based on a MOSFET (metal–oxide–semiconductor field-effect transistor) which is an active device composed of a semiconductor and gate electrode. It is a type of field-effect transistor that acts as a switch and works by controlling the amount of current flowing through a channel between the source and drain. The gate electrode is insulated from the rest of the device and is used to control the flow of current. Applying a voltage to the gate controls the conductivity of the channel, allowing current to travel from the source to the drain. This makes it ideal for use as a switch since it can be easily and quickly turned on or off.The 2SK327700L utilizes a Schottky barrier on the gate-drain region, which results in reduced gate capacitance, greater speed, and improved power efficiency. Additionally, it incorporates an on-chip Zener diode, effectively discharging the gate charge when the device is off, further reducing power dissipation and interference.The 2SK327700L is suitable for a wide range of applications due to its excellent performance, low power consumption, and small package size. It is often used in mobile devices, automotive electronic systems, and industrial equipment that require high frequency or low voltage switching. It is particularly useful in battery-powered applications since it maximizes power efficiency and reduces power loss and dissipation.Overall, the 2SK327700L is an optimal choice for applications where size, weight, and power consumption are a factor. It has excellent surface mount characteristics and is capable of high-speed switching with a maximum operating temperature of 150°C. The on-chip Zener diode provides improved power efficiency and the Schottky barrier enhances its performance. The device is ideal for use in battery-powered applications, automotive devices, and industrial equipment.

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