
Allicdata Part #: | BSS159NE6327-ND |
Manufacturer Part#: |
BSS159N E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 230MA SOT-23 |
More Detail: | N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.4V @ 26µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 44pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 5V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 160mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSS159N E6327 is a single-chip small signal N-channel metal oxide semiconductor field-effect transistor (MOSFET), which is a three-terminal unipolar semiconductor device. This device is used to control current and voltage by varying the gate voltage, allowing the current intensity to be changed, essentially acting as an electronic switch. The name of these transistors is derived from the fact that they have a source (S), a drain (D) and a gate (G) terminal. This article will cover the application fields and working principle of the BSS159N E6327.
The BSS159N E6327 is a small signal N-channel MOSFET. It is designed for use as a switch in circuits and for general-purpose switching applications. It is able to switch at high frequency (up to 15 kHz) and can handle a maximum load current of 3.6 A. It also has a maximum drain-source voltage (Vds) of 30 V. The device has a very low "on-resistance" (Rdson) and is capable of switching extremely fast, making it suitable for use in high-speed applications. This device is particularly useful in switching applications in telecommunications, medical electronics, and automotive applications.
The working principle of the BSS159N E6327 is relatively simple. Essentially, the gate terminal is used to control the drain-source channel with a voltage. By applying a voltage to the gate, a conductive channel is created (or made non-conductive in the case of depletion-type MOSFETs) between the source and drain terminals. This channel allows current to flow from the drain to the source when the voltage at the gate is positive. By varying the gate voltage, the width of the channel and thus the amount of current that can flow can be controlled.
The BSS159N E6327 can be used in a variety of applications. It is used in power-supply circuits, voltage regulators, step-up converters, resonant converters, AC-DC converters, etc. In automotive applications, it is used for controlling power supply systems and for turning on/off actuators. In audio amplification, it is used to amplify low-level audio signals or to convert AC signal to DC signal. The BSS159N E6327 is also used in TV sets, refrigerators, and AC control systems. In computer systems, it can be used to control data transmission between processors and other components, or to control LED or LCD displays.
In summary, the BSS159N E6327 is a single-chip small signal N-channel MOSFET. It is used in a variety of applications such as power-supply circuits, voltage regulators, step-up converters, resonant converters, AC-DC converters, etc. It is also used in automotive and audio amplification applications. The working principle of the BSS159N E6327 is simple: by applying a voltage to the gate, a conductive channel is created between the source and drain terminals. By varying the gate voltage, the amount of current that can flow can be controlled.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSS139H6906XTSA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS192PH6327XTSA1 | Infineon Tec... | 0.14 $ | 1000 | MOSFET P-CH 250V 190MA SO... |
BSS138-T | ON Semicondu... | -- | 1000 | INTEGRATED CIRCUITN-Chann... |
BSS138NH6433XTMA1 | Infineon Tec... | 0.04 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS123-7-F | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS123LT3G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS159NH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS123NH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 0.19A SO... |
BSS138P,215 | Nexperia USA... | 0.04 $ | 246000 | MOSFET N-CH 60V 360MA TO-... |
BSS127L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS138PS,115 | Nexperia USA... | 0.06 $ | 1000 | MOSFET 2N-CH 60V 0.32A 6T... |
BSS138DW-7 | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 50V 0.2A SC7... |
BSS138LT1G | ON Semicondu... | -- | 50000 | MOSFET N-CH 50V 200MA SOT... |
BSS138-D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 0.22A SOT... |
BSS123LT1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138WH6327XTSA1 | Infineon Tec... | -- | 72000 | MOSFET N-CH 60V 280MA SOT... |
BSS119L6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 50V 200MA SOT... |
BSS126L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS123_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS119 E7978 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138N E7854 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS139L6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS138W | ON Semicondu... | -- | 1000 | MOSFET N-CH 50V 0.21A SOT... |
BSS123TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS127SSN-7 | Diodes Incor... | -- | 6000 | MOSFET N-CH 600V 50MA SC5... |
BSS127S-7 | Diodes Incor... | -- | 42000 | MOSFET N-CH 600V 0.05A SO... |
BSS159NH6906XTSA1 | Infineon Tec... | 0.19 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS169H6906XTSA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS119E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138W-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 50V 0.2A SOT3... |
BSS169H6327XTSA1 | Infineon Tec... | -- | 50000 | MOSFET N-CH 100V 170MA SO... |
BSS138PW,115 | Nexperia USA... | 0.04 $ | 1000 | MOSFET N-CH 60V 320MA SOT... |
BSS123NH6433XTMA1 | Infineon Tec... | 0.04 $ | 1000 | MOSFET N-CH 100V 0.19A SO... |
BSS159NL6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS138K | ON Semicondu... | -- | 42000 | MOSFET N-CH 50V 220MA SOT... |
BSS139 E6906 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS126H6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS138 | ON Semicondu... | -- | 124 | MOSFET N-CH 50V 220MA SOT... |
BSS123E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
