BSS159N E6327 Allicdata Electronics
Allicdata Part #:

BSS159NE6327-ND

Manufacturer Part#:

BSS159N E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 230MA SOT-23
More Detail: N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount ...
DataSheet: BSS159N E6327 datasheetBSS159N E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 44pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSS159N E6327 is a single-chip small signal N-channel metal oxide semiconductor field-effect transistor (MOSFET), which is a three-terminal unipolar semiconductor device. This device is used to control current and voltage by varying the gate voltage, allowing the current intensity to be changed, essentially acting as an electronic switch. The name of these transistors is derived from the fact that they have a source (S), a drain (D) and a gate (G) terminal. This article will cover the application fields and working principle of the BSS159N E6327.

The BSS159N E6327 is a small signal N-channel MOSFET. It is designed for use as a switch in circuits and for general-purpose switching applications. It is able to switch at high frequency (up to 15 kHz) and can handle a maximum load current of 3.6 A. It also has a maximum drain-source voltage (Vds) of 30 V. The device has a very low "on-resistance" (Rdson) and is capable of switching extremely fast, making it suitable for use in high-speed applications. This device is particularly useful in switching applications in telecommunications, medical electronics, and automotive applications.

The working principle of the BSS159N E6327 is relatively simple. Essentially, the gate terminal is used to control the drain-source channel with a voltage. By applying a voltage to the gate, a conductive channel is created (or made non-conductive in the case of depletion-type MOSFETs) between the source and drain terminals. This channel allows current to flow from the drain to the source when the voltage at the gate is positive. By varying the gate voltage, the width of the channel and thus the amount of current that can flow can be controlled.

The BSS159N E6327 can be used in a variety of applications. It is used in power-supply circuits, voltage regulators, step-up converters, resonant converters, AC-DC converters, etc. In automotive applications, it is used for controlling power supply systems and for turning on/off actuators. In audio amplification, it is used to amplify low-level audio signals or to convert AC signal to DC signal. The BSS159N E6327 is also used in TV sets, refrigerators, and AC control systems. In computer systems, it can be used to control data transmission between processors and other components, or to control LED or LCD displays.

In summary, the BSS159N E6327 is a single-chip small signal N-channel MOSFET. It is used in a variety of applications such as power-supply circuits, voltage regulators, step-up converters, resonant converters, AC-DC converters, etc. It is also used in automotive and audio amplification applications. The working principle of the BSS159N E6327 is simple: by applying a voltage to the gate, a conductive channel is created between the source and drain terminals. By varying the gate voltage, the amount of current that can flow can be controlled.

The specific data is subject to PDF, and the above content is for reference

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