BSS192PL6327HTSA1

Vgs(th) (Max) @ Id:	2V @ 130µA
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	104pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.1nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	12 Ohm @ 190mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.8V, 10V
Current - Continuous Drain (Id) @ 25°C:	190mA (Ta)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSS192PL6327HTSA1 Application Field and Working Principle

BSS192PL6327HTSA1 is an advanced single high voltage field-effect transistor (FET) from NXP Semiconductors. Small in size and high in performance, this low-frequency FET can be widely used in different fields including thermal management systems, motor drives, power amplifiers, high-voltage circuits, and more.The main advantages of the BSS192PL6327HTSA1 are its high avalanche energy capability and its low drain-source resistance. It also operates at low currents and has excellent on-state performance. Moreover, this FET has a low threshold voltage and can withstand a high drain-source voltage. This device also offers good stability, wide temperature ranges, and high endurance.

The working principle of the BSS192PL6327HTSA1 is simple yet effective. It acts as a switch, allowing current to pass through when placed in an active state. This state is triggered by the threshold voltage, which is provided by the gate-source voltage. When the threshold voltage is reached, the FET opens its drain-source channel, allowing current to flow. Similarly, when the voltage drops below the threshold voltage, the channel is closed again, thus blocking any current from passing through the semiconductor.

The primary application of the BSS192PL6327HTSA1 is in circuits that require high-voltage switching or amplifying. It is also used in controlling power in motors, relays, heating elements, and more. Such applications are found in a variety of everyday items, including RFID readers, laptop chargers, cell phone chargers, CCTV systems, radar systems, and many other applications. Furthermore, because of its small size and low power consumption, this FET can be integrated with other components to create more efficient and cost-effective solutions.

In conclusion, the BSS192PL6327HTSA1 is a reliable single high voltage field-effect transistor from NXP Semiconductors. Thanks to its high avalanche energy capability and low drain-source resistance, this FET can operate in different applications, such as thermal management systems, motor drives, power amplifiers, and more. Additionally, this FET has a low threshold voltage and excellent on-state performance, allowing it to reliably control power in motors, relays, heating elements, RFID readers, and more.

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