BUK7107-55ATE,118 Discrete Semiconductor Products

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BUK7107-55ATE is a single n-channel enhancement mode Field Effect Transistor (FET), which is designed for use in power management and protection circuits. This FET is designed and manufactured to meet the increasing demand for low on-resistance steering and protection for a wide range of automotive and industrial applications.

Features and Benefits

• Low on-resistance
• Excellent output characteristics
• Low input and output leakage
• Fast switching capability
• Low input capacitance

Applications

BUK7107-55ATE is ideal for automotive applications including power switching, power management circuits and protection circuits. It is also suitable for industrial applications such as switching power supplies, LED lighting, and power supply control.

Working Principle

BUK7107-55ATE is a single-channel device with a p-channel source and an n-channel source. It works by altering the threshold voltage required to turn the FET “on”. This FET opens an N channel between the source and the drain when the voltage at the gate is high enough, allowing current to flow. The amount of current that can flow is controlled by the voltage applied to the gate. If the voltage is increased, the current will increase and vice versa. When the voltage across the FET is insufficient to maintain the N-channel, then the FET turns off and no current can flow.

BUK7107-55ATE provides excellent performance in terms of switching, low on-resistance, fast on-off time and good output characteristics. This FET is designed to be compatible with a variety of voltage and current levels, making it a good choice for many different types of applications.

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