BUK7207-30B,118 Allicdata Electronics

BUK7207-30B,118 Discrete Semiconductor Products

Allicdata Part #:

1727-5244-2-ND

Manufacturer Part#:

BUK7207-30B,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 75A DPAK
More Detail: N-Channel 30V 75A (Tc) 167W (Tc) Surface Mount DPA...
DataSheet: BUK7207-30B,118 datasheetBUK7207-30B,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Power Dissipation (Max): 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A BUK7207-30B,118 is a single transistor with a field-effect type (FET) commonly used for a variety of electronic applications. It is a N-channel enhancement mode MOSFET which is manufactured by NXP Semiconductors. This type of transistor has many advantages, such as low on-state resistance, low gate-drive voltage, and low gate-to-source capacitance, making it suitable for applications such as audio and linear switching. In addition to these advantages, it has a wide range of gate-threshold voltage and drain-to-source breakdown voltage, allowing for greater flexibility and improved reliability in many different applications. The following will discuss the applications and working principle of this transistor further.

The BUK7207-30B,118 transistor can be used in many different types of applications. One of the most common applications is in audio applications such as amplifiers, preamps, and power supplies. This type of transistor is great for these types of applications because it has low on-state resistance, low gate-drive voltage, and low gate-to-source capacitance. These characteristics allow the signal to be easily amplified with minimal interference or distortion. In addition, this type of transistor can also be used for power supply and switching applications. The wide range of gate-threshold voltage and drain-to-source breakdown voltage allows for greater flexibility and improved reliability in power supply and switching applications.

The working principle of a BUK7207-30B,118 transistor is based on the semiconductor principle that was discovered by Willard Frank Libby in 1947. This type of transistor acts as a switch that is controlled by a Voltage on the gate of the device. The Gate of the transistor is connected to the drain and source, and the voltage on the gate determines the conductive properties of the channel. When the Voltage is applied to the gate, the channel between the drain and the source is opened up, allowing current to flow through the channel. When the Voltage is removed, the channel is closed and no current can flow.

The BUK7207-30B,118 transistor is a very useful component for many different applications. Its low on-state resistance, low gate-drive voltage, and low gate-to-source capacitance make it ideal for audio and linear switching applications. Its wide range of gate-threshold voltage and drain-to-source breakdown voltage make it suitable for use in power supply and switching applications. Finally, the working principle of this transistor is based on the basic principles of semiconductor physics. This allows for enhanced reliability in many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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