BUK7507-30B,127

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK7507-30B,127 is a high-performance single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It uses a vertical DMOS structure and a novel gate-oxide design to provide superior operating characteristics. This type of MOSFET can be used in both digital and analog circuits, as it allows for high switching speed and flexibility.

MOSFETS are transistors, and the BUK7507-30B,127 uses one n-channel, or MOSFET, that controls an electric current between the source (S) and the drain (D). The MOSFET is a voltage-controlled device that utilizes a channel between the source and the drain, which opens or closes based on the voltage applied to the gate. This is known as the gate threshold voltage.

The BUK7507-30B,127 is designed to provide superior power handling capabilities with low on-resistance. It has a total gate charge of 8nC (nano-Coulombs) and can handle up to 30A of continuous drain current. It also provides low reverse leakage current and has an improved threshold voltage of -2V. The MOSFET also features a low input capacitance of 14pF (pico-Farads) and a high avalanche energy rating of 5mJ (milli-Joules).

The BUK7507-30B,127 is commonly used in a variety of applications such as DC-DC converters, Class-D audio amplifiers, LED drivers and automotive applications. It is also used as a switching device in power electronics applications, as the low on-resistance and high breakdown voltage of the MOSFET allows it to withstand large voltage and current swings. The device also offers high-temperature performance, making it suitable for use in automotive and high-temperature environments.

The working principle of the BUK7507-30B,127 is quite simple. When the gate voltage is above the threshold voltage, the channel is open and current will flow from the source to the drain. When the gate voltage is less than the threshold voltage, then the channel closes and current will stop flowing from the source to the drain.

Overall, the BUK7507-30B,127 is an ideal choice for applications requiring low on-resistance, high breakdown voltage and high temperature operations. It is capable of handling large voltages and currents and is suitable for a variety of applications in the power electronics market. The superior design of the MOSFET allows for flexibility, high switching speeds and superior thermal efficiency.

The specific data is subject to PDF, and the above content is for reference