Allicdata Part #: | 568-5717-5-ND |
Manufacturer Part#: |
BUK7508-40B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 75A TO220AB |
More Detail: | N-Channel 40V 75A (Tc) 157W (Tc) Through Hole TO-2... |
DataSheet: | BUK7508-40B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 157W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2689pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FETs, or Field Effect Transistors, are a type of transistor used in semiconductor technology. They are commonly used in the electronics industry, with applications ranging from signal processing to power amplifier circuits. BUK7508-40B,127 is a type of FET specifically developed for high-speed digital applications, such as communications systems and digital switching systems.
The BUK7508-40B,127 is a high voltage, low current, and high-speed N-channel enhancement type FET. It is a single FET device, which means it is made up of a single gate and drain. The single FET allows for a relatively high voltage and current capability, compared to other types of FETs. It is a very low resistance device, which means that the current can flow very quickly, and thus reduce signal distortion.
The working principle behind the FET is simple. It is composed of a gate and a drain, which are connected by an insulated gate dielectric. The gate is the control electrode and the drain is the signal electrode. When a voltage is applied to the gate, it creates a small electric field that allows current to flow from the drain to the gate. This flow of current is known as the drain current.
The BUK7508-40B,127 is designed for use in high-speed digital applications, such as communications systems and digital switching systems. It is well suited for these applications due to its high voltage and current capability, low resistance, and fast switching speed. The FET’s ability to quickly switch between conducting and non-conducting states makes it highly suitable for communication engineering and signal processing. It can be used in a wide range of digital systems, including radio frequency (RF) receivers, amplifiers, and power amplifiers.
In RF circuits, the FET is used to process signals with high speed and accuracy. It can be used to amplify weak signals, reduce distortion and improve the signal-to-noise ratio. The FET is also used to provide gain in power amplifiers, as well as to improve the linearity of a circuit. It is also used for modulator/demodulator circuits, which are used to encode and decode digital signals.
The BUK7508-40B,127 is a versatile FET with a wide range of applications. It is a high voltage, low current, and high-speed N-channel enhancement type FET, making it well suited for high-speed digital applications. It is used in RF receiver, amplifier, and power amplifier circuits to process signals with high speed and accuracy, as well as to reduce distortion and improve the signal-to-noise ratio. It is also used for modulator/demodulator circuits, which are used to encode and decode digital signals.
The specific data is subject to PDF, and the above content is for reference
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