Allicdata Part #: | 568-5718-5-ND |
Manufacturer Part#: |
BUK7511-55B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 75A TO220AB |
More Detail: | N-Channel 55V 75A (Tc) 157W (Tc) Through Hole TO-2... |
DataSheet: | BUK7511-55B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 157W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2604pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7511-55B,127 is a single high-voltage and high-current vertical N-channel Power MOSFET with low on state resistance, excellent avalanche and dv/dt capability. A standard on-chip gate protection allows the MOSFET to switch on and off without any additional external series resistor. It is provided in a SMD package and is compatible with all surface mountable soldering processes.
A power MOSFET is a type of transistor that uses an external gate voltage to control the flow of electrons between the source and the drain. The gate voltage controls the amount of current that is allowed to flow through the MOSFET by modulating the thickness of the conducting channel between the source and the drain. When the gate voltage is high, the conducting channel is wide, and a large amount of current can flow through the MOSFET. When the gate voltage is low, the conducting channel is small and only a small amount of current can flow.
The BUK7511-55B,127 has a drain-source voltage of 500V, a drain current of up to 55A, and a source resistance of 12 Ohm in the ON state. It has a maximum power dissipation of 600W, a fast switching speed, and a high breakdown voltage of 700V. These characteristics make it ideal for a wide range of applications, including low-voltage switching, automotive power supply systems, power supply systems for consumer electronics and industrial machines, and most other high-voltage MOSFET applications.
The BUK7511-55B,127 is most often used in applications where high voltages need to be switched on and off quickly. This makes it a great choice for motor control, power switching, and other similar applications. Its low on-resistance and fast switching speed make it ideal for high-current applications like motor drives, as it can switch large loads of current quickly and with minimal power losses. Its excellent avalanche and dv/dt capability make it suitable for high-voltage power supplies, as it can safely handle high voltage transients without damage.
The BUK7511-55B,127’s on-chip gate protection circuitry ensures that the gate voltage is well protected from any external transients or charges. This ensures that the MOSFET functions correctly even in the harshest of electrical environments. The standard SMD package makes it easy to install and compatible with all surface mountable soldering processes.
In short, the BUK7511-55B,127 is a high-voltage and high-current single N-channel Power MOSFET designed for use in a wide range of applications. Its low on-state resistance, fast switching speed, and high breakdown voltage make it an ideal choice for switching applications and power supply systems, while its on-chip gate protection and standard SMD package make it easy to use and install.
The specific data is subject to PDF, and the above content is for reference
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