BUK7607-30B,118 Allicdata Electronics

BUK7607-30B,118 Discrete Semiconductor Products

Allicdata Part #:

1727-4700-2-ND

Manufacturer Part#:

BUK7607-30B,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 75A D2PAK
More Detail: N-Channel 30V 75A (Tc) 157W (Tc) Surface Mount D2P...
DataSheet: BUK7607-30B,118 datasheetBUK7607-30B,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2427pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BUK7607-30B,118 is a single-level FET used in semiconductor electronics. It is a powerful component that is used in various industrial and commercial applications such as motor controls, power supply circuit designs, and many more.

This FET has a high input impedance, low power dissipation, and small on-resistance, which makes it ideal for use in a wide range of applications. The FET also has a low leakage current, low operating temperature, and high-frequency switching.

The BUK7607-30B,118 is constructed using a N-channel field effect transistor (FET). It is made using a double-diffused “DMOS” technology, which allows for efficient, low-voltage, and low-frequency switches. The device also contains a depletion-type channel and gate region that are connected to the non-conductive substrate.

The FET can be used as a high-side or a low-side switching device. When used as a high-side switching device,the FET can be used for controlling the current that is supplied to a load, reducing the power consumption of circuits, and as an electronic switch.When used as a low-side switching device, the FET can be used for controlling the voltage levels of a circuit, reducing the amount of power dissipated in a circuit, and as an electronic switch.

The construction of the BUK7607-30B,118 is designed to ensure efficient operation. The device contains an internally-protected gate terminal and a metallic shield that prevents interference from nearby components. Additionally, the device also contains Zener strikes to protect the gate region from potential damage.

The FET also includes a reverse-diode protection system that helps prevent reverse current flow and protects the device from damage. The device is also temperature and overload protected, meaning it will be able to operate properly in extreme conditions and has a high level of reliability.

The BUK7607-30B,118 can be used in both digital and analog applications. In digital applications, the FET can be used as a switch, switching on and off signals in order to control the flow of current. The FET can also be used in analog applications, such as controlling the gain of an amplifier, controlling the speed and torque of a motor, and for voltage regulation in power supplies and other circuits.

The working principle of the BUK7607-30B,118 is relatively simple. When the FET is in its starting state, the gate voltage is low and the channel resistance is high. When a positive voltage is applied to the gate terminal, the channel resistance is lowered and the current can flow through the FET. This allows the FET to be used as a switch, controlling the flow of current in a circuit.

The BUK7607-30B,118 is an integral component in many industrial and commercial applications. It is an efficient, reliable, low-cost, and low-voltage FET used in motor control, power supply, and many other applications. The device\'s versatile nature makes it an ideal choice for many applications where a FET is needed.

The specific data is subject to PDF, and the above content is for reference

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