BUK7611-55B,118 Allicdata Electronics
Allicdata Part #:

1727-4703-2-ND

Manufacturer Part#:

BUK7611-55B,118

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 157W (Tc) Surface Mount D2P...
DataSheet: BUK7611-55B,118 datasheetBUK7611-55B,118 Datasheet/PDF
Quantity: 1000
4800 +: $ 0.32300
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2604pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK7611-55B is an N-channel power MOSFET, one type of Field Effect Transistor (FET). It is a three terminal device, where two of the terminals are the source and drain, while the third is the gate. MOSFETs are one of the most important components of any digital or analog integrated circuit, as they are seen in almost every type of electronic equipment, whether it’s a computer, television, radio or other forms of consumer electronics.

The BUK7611-55B has an interesting application due to its capability to switch high currents. It is typically used in high current applications, where larger FETs cannot be used. This is due to the fact that the current path is much smaller in the BUK7611-55B, meaning that much higher currents can be represented without causing too much heat. The FET is capable of switching currents up to 400A, and can handle voltages up to 55V.

Another interesting aspect of the BUK7611-55B is that it is a ‘logic level’ FET. This means that it can be driven in two different ways. First, it can be driven with a standard TTL or CMOS compatible input, meaning that it can be interfaced directly with any microcontroller or logic IC. Second, it can be driven with an input voltage level of under 5V, meaning that it is suitable for use in low power applications such as battery operated products. The low input voltage also makes it a very power efficient component.

The working principle behind the BUK7611-55B is relatively straight forward. When a voltage is applied to the gate of the FET, a field is created between the source and the drain which allows the current to flow. As the current flows, the voltage at the drain is dropped and thus, the source end receives a higher voltage. This action of the FET is referred to as ‘pull up’.

The FET also has a ‘pull down’ behavior, where the source terminal receives a lower voltage and the drain terminal receives a higher voltage. This behavior enables it to act as a ‘switch’, as it can control the flow of current between two points. This can be used in many applications, from simple switching circuits to complex digital integrated circuits.

The BUK7611-55B is an excellent choice for use in high current switching applications due to its higher current handling capability and lower input voltage. It is also a great choice for low power applications where it can be used to directly interface with many different types of logic IC’s.

In conclusion, the BUK7611-55B is a great choice for use in high current applications due to its ability to switch currents up to 400A and its lower input voltage. Additionally, its ‘logic level’ capabilities make it an ideal component for use in low power applications. Understanding its ability to both ‘pull up’ and ‘pull down’ enables it to be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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