Allicdata Part #: | 1727-4704-2-ND |
Manufacturer Part#: |
BUK7613-75B,118 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 75V 75A D2PAK |
More Detail: | N-Channel 75V 75A (Tc) 157W (Tc) Surface Mount D2P... |
DataSheet: | BUK7613-75B,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.32300 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 157W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2644pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7613-75B,118 is a single power MOSFET that is used in many common electronic applications.
A MOSFET is one type of field-effect transistor (FET) that controls electric signals by injection of electronic charge carriers, which can be electrons or holes, through an insulated gate. The current flow through a MOSFET is controlled by varying the amount of electric charge on the gate. As the voltage on the gate increases, the current flowing through the channel increases exponentially.
The BUK7613-75B,118 is a N-Channel enhancement mode power MOSFET. It consists of a MOSFET with a 100-volt V(th) drain-source breakdown voltage and a thumb-sized package. It is designed for power management applications, such as motor control and high-power digital logic circuits. It has a Gate-Source voltage of -20 volts and a drain-source On-resistance of 1.75ohms that is perfect for high-speed switching and low-power applications.
The BUK7613-75B,118 can handle a maximum of 65amps of drain current, making it ideal for applications such as high-power switching and motor control. It also has a maximum drain source voltage of 100v and the on-state resistance of 1.75ohms. The device is also designed with integrated built-in diodes to protect against reverse transients.
The BUK7613-75B,118 has many features that make it ideal for applications such as motor control and high-power digital logic circuits. It is small in size, has low On-resistance and a maximum drain current of 65amps. Additionally, it has integrated protection diodes and a Gate-Source voltage of -20 volts. It also has a temperature range of -55°C to 175°C.
In summary, the BUK7613-75B,118 is a single N-Channel enhancement mode MOSFET designed for power management applications. It has a V(th) drain-source breakdown voltage of 100 volts, a drain-source On-resistance of 1.75ohms, a maximum drain current of 65amps and a Gate-Source voltage of -20 volts. Furthermore, it is designed with integrated protection diodes and has a temperature range of -55°C to 175°C.
The specific data is subject to PDF, and the above content is for reference
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BUK755R2-40B,127 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 40V 75A TO220... |
BUK7535-100A,127 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 100V 41A TO22... |
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BUK7880-55,135 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 55V 3.5A SOT2... |
BUK7513-75B,127 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 75V 75A TO220... |
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