BUK7623-75A,118 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-7167-1-ND |
| Manufacturer Part#: |
BUK7623-75A,118 |
| Price: | $ 1.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 75V 53A D2PAK |
| More Detail: | N-Channel 75V 53A (Tc) 138W (Tc) Surface Mount D2P... |
| DataSheet: |  BUK7623-75A,118 Datasheet/PDF |
| Quantity: | 217 |
| 1 +: | $ 0.91350 |
| 10 +: | $ 0.80766 |
| 100 +: | $ 0.63806 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 138W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2385pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Cut Tape (CT) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK7623-75A is a single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for applications such as switching, voltage or current controlling, or regulating current flow. It has high gain, robust SOA (Safe Operating Area) and improved levels of dynamic and static parameters. These attributes makes it useful in a wide range of applications.
BUK7623-75A has a drain current of 75A and a drain-source voltage of 60V. It has a high switching speed, ultra-low on-resistance and low gate charge. All these factors contribute to making it suitable for high frequency switching applications. In terms of power requirements, it can handle up to 32W. The on-resistance is small enough that the power dissipation is minimized, allowing it to operate at high temperatures.
The device also features a very low gate input capacitance, meaning that it responds quickly to electrical signals. It has a high linear current transfer rate (slope A/V) of 0.4mΩ/V, which is important for applications that use differential input techniques. The frequency response of the device is significant, having a switching frequency of up to 5MHz.
The working principle of BUK7623-75A involves the control of conductivity between the source and drain terminals by changing the voltage applied to the gate. The FET is basically composed of two main parts: the main channel, which is the semiconducting material in between the source and drain, and the gate, which is the electrical charge controlling the main channel. When a negative voltage is applied to the gate, it causes the main channel to become blocked, preventing current from flowing between the source and drain. When the gate voltage is set to zero, the FET is in its strongest conducting state. By controlling the gate voltage, the FET can control the current flow between the source and drain.
BUK7623-75A is largely used for regulating the power supply of IGBTs, for high-frequency switching in power MOSFETs, and for motor driver controls. It is especially useful in automotive applications as it can be used for fuel injection, Actuator motors and IDMs (Innovated Driver Modules). Its robust SOA ensures it can withstand surge currents and high temperature applications.
In conclusion, BUK7623-75A is a single MOSFET ideal for high frequency switching in power MOSFETs, regulating the power supply of IGBTs and controlling motor drivers. It has a high linear current transfer rate, fast switching speed, low gate input capacitance, robust SOA and high frequency response. These attributes make the device suitable for automotive applications, as well as any other application requiring high frequency switching and robust SOA operation.
The specific data is subject to PDF, and the above content is for reference
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