Allicdata Part #: | 1727-7168-2-ND |
Manufacturer Part#: |
BUK7628-100A,118 |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 47A D2PAK |
More Detail: | N-Channel 100V 47A (Tc) 166W (Tc) Surface Mount D2... |
DataSheet: | BUK7628-100A,118 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.47590 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 166W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK7628-100A,118 is a single-gate field effect transistor or FET. It is a type of transistor notable for its ability to allow or stop the flow of electrons, which can be used to switch electrical circuits, amplify signals, and enable current to pass through it. A single-gate FET is an electronic component with many advantages, such as low power consumption, low noise, and high reliability compared to other types of transistors. This makes it ideal for use in a variety of applications, from power electronics to audio and radio frequency communication networks.
The acronym FET stands for field-effect transistor. It is a type of semiconductor device, which consists of two parts, an active region and a gate. The active region contains a source and a drain and gates control the conduction between the source and the drain. The gate is secluded from the rest of the circuit so that it can control the flow of electrons without being affected by the external environment. The FET is also a voltage-controlled device, meaning that it will either decrease or increase its conduction as the gate voltage increases or decreases, respectively.
BUK7628-100A,118 is an N-channel FET, which means that it has an N-type material in the active region. The N-type material allows electrons to flow from the source to the drain, while the gate prevents electrons from flowing the opposite direction. This is achieved by applying a certain voltage to the gate, and thereby controlling the amount of current that flows through the FET. The FET is a three-terminal device, with the source, gate, and drain all connecting to different places in the circuit.
BUK7628-100A,118 has a wide range of applications. It is commonly used in power electronics, as it can provide precise and reliable control of the power flow. It is also used in audio and radio frequency communication networks, as its low noise characteristics make it ideal for these applications. Additionally, its low power consumption, high reliability, and low cost make it an ideal choice for many other applications such as sensors and photo resistors.
The working principle of BUK7628-100A,118 is simple. When a negative voltage is applied to the gate, the N-type material in the active region is ‘pushed away’ from the source and drain terminals, preventing current from flowing. When a positive voltage is applied, electrons are attracted to the gate and current is permitted to flow. By varying the voltage of the gate, the amount of current that is allowed to pass can be precisely controlled.
In conclusion, BUK7628-100A,118 is a single-gate FET that has many advantages over other types of transistors. Its ability to precisely control current allows it to be used in a variety of applications, from power electronics to audio and radio frequency communication networks. Additionally, its low power consumption, high reliability, and low cost make it an ideal choice for many other applications. The working principle of the FET is simple, with a negative voltage applied to the gate preventing current from flowing, and a positive voltage allowing current to pass through.
The specific data is subject to PDF, and the above content is for reference
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