BUK762R0-40E,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1089-2-ND |
Manufacturer Part#: |
BUK762R0-40E,118 |
Price: | $ 0.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 120A D2PAK |
More Detail: | N-Channel 40V 120A (Tc) 293W (Tc) Surface Mount D2... |
DataSheet: | BUK762R0-40E,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.67606 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 109.2nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 293W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Transistors are semiconductor devices that are employed for the purpose of conducting current. FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are two types of transistors that are used in many applications. Among them, the single-type transistors are used most frequently. Among these kinds of single transistors, one of the commonly used ones is the BUK762R0-40E,118. In this article, we will look into the application field and working principle of this special transistor.
BUK762R0-40E,118 is a type of JFET (Junction Field-Effect Transistor) that is normally employed in radio frequency (RF) and microwave amplifiers, switches, filters, and oscillators. It is constructed by joining two p-type semiconductor materials with two n-type materials. It has two types of terminals, namely the source and the gate. The source terminal is used to supply power to the transistor, while the gate terminal controls the conductivity of the channel. It has a maximum power rating of about 0.4 watts at a temperature of 25°C.
The working principle of the BUK762R0-40E,118 can be best explained by analyzing its unique structure. The semiconductor junction that is formed between the n-type and p-type materials is known as depletion region. This special region comprises negative charges which act like a barrier to any incoming electrons. When a voltage is applied to the gate, it will induce an electric field between the depletion region. This electric field will modify the position of the negative charges in the depletion region, thus controlling the conductivity of the channel. This is referred to as “current conduction control.”
Apart from its application in RF and microwave amplifiers, switches, filters and oscillators, the BUK762R0-40E,118 transistor can also be used in high-speed pulse amplifiers, smart power management systems, level shifters and Schottky diodes. It is also used in analog and digital circuits that require voltage controlled current sources or current controlled voltage sources.
The BUK762R0-40E,118 is a special transistor with a wide range of applications. Its working principle revolves around the depletion region that it comprises of and its ability to control the conductivity of the channel through this region. This transistor has a wide range of applications, including RF and microwave amplifiers, switches, filters, oscillators, as well as level shifters and Schottky diodes.
The specific data is subject to PDF, and the above content is for reference
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