BUK763R4-30B,118 Allicdata Electronics

BUK763R4-30B,118 Discrete Semiconductor Products

Allicdata Part #:

1727-5253-2-ND

Manufacturer Part#:

BUK763R4-30B,118

Price: $ 0.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 75A D2PAK
More Detail: N-Channel 30V 75A (Tc) 255W (Tc) Surface Mount D2P...
DataSheet: BUK763R4-30B,118 datasheetBUK763R4-30B,118 Datasheet/PDF
Quantity: 1000
800 +: $ 0.61642
Stock 1000Can Ship Immediately
$ 0.68
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 255W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A BUK763R4-30B, 118 is commonly classified as a single transistor FETs or MOSFETs. It is a type of field effect transistor (FET) that has three large terminals—the drain, the gate, and the source. It is also known as a MOSFET because its large rectangular gate blocks the flow of current away from the drain and source, thus amplifying or suppressing its conductivity significantly. FETs provide a large variety of application fields and working principles.

The BUK763R4-30B, 118 is a field effect transistor that has excellent low-frequency noise performance and its applications include low-noise amplifier circuits, switch circuits, and analog signal processing circuits. It is designed to be used in either high-speed switching applications or low-noise amplifier circuits that require high linearity. It can be used in low-noise amplifier circuits to enable high performance and low noise figures.

In addition, this type of FET is frequently utilized in gain linearization and attenuation circuits, as it can accurately control its gain. The BUK763R4-30B, 118 also features excellent ESD (electrostatic discharge) protection performance and can effectively reduce the effect of voltage transients in the circuit. Furthermore, it can also be used in various analog signal processing applications, including precision replica-circuit analysis and optimization.

The BUK763R4-30B, 118 has multiple operating principles. To start, FETs can be operated either in enhancement mode (E-mode), or depletion mode (D-mode). When operated in E-mode, the transistor acts like a switch, where the voltage applied to the gate is used to control its switching state. In contrast, when operated in D-mode, the transistor is normally “on” and the gate voltage is used to control its current.

The BUK763R4-30B, 118 can also be used in either linear or switching applications. The linear applications of FETs use varying gate voltages to produce linearly increasing or decreasing drain-source current, while the switching applications of FETs use the gate voltage to “turn the FET on” and “off”. FETs can also be used in applications such as switched capacitors and various logic circuits.

The BUK763R4-30B, 118 also features features excellent thermal stability. It has a high thermal resistance which means that it can withstand high temperatures before its performance is degraded. Additionally, its high breakdown voltage rating ensures that it is highly reliable for high voltages applications.

Overall, the BUK763R4-30B, 118 is a versatile FET with multiple operating principles, excellent ESD protection and thermal stability, and a wide range of applications. It is suitable for any type of electronic device that requires a low-noise amplifier circuit or a switch circuit, as well as any digital signal processing or high power, high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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