BUK764R0-40E,118

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Transistors - FETs, MOSFETs - Single

While the use of traditional transistors is still in practice, modern technology is leaning more towards the use of field-effect transistors, commonly known as FETs. One of the major advantages of FETs is their power efficiency. FETs offer very low gate capacitance, which allows them to operate more efficiently than traditional transistors.

One example of a FET is the BUK764R0-40E,118, which is an N-channel MOSFET. Manufactured by Infineon Technologies, this device is part of the BUK family, which consists of devices that are designed to suit a variety of applications. This particular device is a enhancement mode MOSFET, meaning that it uses the electric field produced by the gate terminal to control the flow of electrons between the Drain and Source terminals. This electric field alters the resistive property of the channel, allowing for greater conduction or less resistance.

The BUK764R0-40E,118 has a rated drain-source breakdown voltage of 400 V and an Id of 80 A. This makes it suitable for high-voltage, high-reliability applications such as power converter and inverter applications, in addition to a wide range of other applications. Its low on-state resistance of only 13 mΩ also makes it suitable for high-efficiency transfer of electricity.

The BUK764R0-40E,118 is designed to handle pulsed current applications due to its relatively low gate charge. It has an impressive maximum gate-source voltage of ±40 V and a continuous drain current at rated Vds of 80 A. It also has a superior thermal resistance of only 10 K/W, making it suitable for wide temperature range and high-frequency conditions.

The BUK764R0-40E,118 is an ideal device for applications requiring superior performance and reliability. It is a popular choice for automotive, telecommunications and industrial control applications, as well as any other application that requires a high channel drain current, high channel input voltage, or a low on-state resistance.

The BUK764R0-40E,118 is part of a family of FETs that offers superior performance, reliability and efficiency. This particular device offers excellent performance in high-current pulsed applications, making it a popular choice for those applications. Its low on-state resistance and superior thermal resistance make it suitable for a variety of applications, and its high-current capabilities make it an ideal choice for industrial and automotive applications, in addition to any other application requiring a high-performance FET.

In conclusion, the BUK764R0-40E,118 is a versatile and reliable N-channel MOSFET, offering superior performance in both continuous and pulsed current applications. Its low on-state resistance, high-current capabilities, and superior thermal resistance make it an ideal device for a variety of industrial, automotive and telecommunications applications.

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