BUK769R6-80E,118 Allicdata Electronics

BUK769R6-80E,118 Discrete Semiconductor Products

Allicdata Part #:

1727-1092-2-ND

Manufacturer Part#:

BUK769R6-80E,118

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V 75A D2PAK
More Detail: N-Channel 80V 75A (Tc) 182W (Tc) Surface Mount D2P...
DataSheet: BUK769R6-80E,118 datasheetBUK769R6-80E,118 Datasheet/PDF
Quantity: 1000
4800 +: $ 0.47331
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 59.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4682pF @ 25V
FET Feature: --
Power Dissipation (Max): 182W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are one of the most commonplace components in electronics. They facilitate the transformation of a small electric current into a larger one. The BUK769R6-80E,118 from Foundotron is a single source N-Channel MOSFET, and it is an ideal solution for a wide range of applications. This article will delve into the details of the BUK769R6-80E,118, specifically its application field and working principle.

The BUK769R6-80E,118 is a single source N-Channel MOSFET. As a MOSFET, its purpose is to control the flow of current between two separate components. The BUK769R6-80E,118 has a high drain current of 118 A and a maximum drain-source voltage of 200 V. It has a low on-state resistance which allows it to achieve switching speeds of up to 100 A/ns. It also has a fast switching speed, a low input capacitance, and a low gate charge.

Due to its features, the BUK769R6-80E,118 can be used in a wide range of power management applications. Examples include DC/DC converters, hot swap controllers, motor drivers, and battery-powered circuits. It is also suitable for applications where reliability and robustness are key priorities. Additionally, the BUK769R6-80E,118 can also be used for low signal switching.

The BUK769R6-80E,118’s working principle is relatively simple to understand. It has an N-type MOSFET, which is composed of a source, a drain, and a gate. When the gate voltage is increased, the resistance between the source and the drain decreases. This allows current to flow freely between the two components, while the gate voltage controls the amount of current that flows. When the gate voltage is lowered, the resistance between the source and the drain increases, thereby preventing any current from flowing.

The BUK769R6-80E,118’s features and working principle make it an essential component in the design of a wide range of power management systems. The component is highly-reliable, easy to source, and can switch high currents with a responsive response time. It is ideal for applications that require precise power delivery, fast switching speed, and reliability. The BUK769R6-80E,118 allows for improved efficiency and performance in various power management systems.

The specific data is subject to PDF, and the above content is for reference

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