Allicdata Part #: | 1727-7313-2-ND |
Manufacturer Part#: |
BUK7M17-80EX |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 43A LFPAK33 |
More Detail: | N-Channel 80V 43A (Tc) 79W (Tc) Surface Mount LFPA... |
DataSheet: | BUK7M17-80EX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.22396 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2031pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29.6nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK7M17-80EX is a vertical N-channel MOSFET. This type of device is a type of transistor, which are components made up of semiconductor material, usually silicon, which can amplify large signals, control current and voltage, and provide protection for circuits. The BUK7M17-80EX is designed for applications ranging from high-voltage, high-current switching and amplification to power management. In particular, it is ideal for switching appliances in non-critical applications such as heating, ventilation, air conditioning and other household appliances. Thus, it is suitable for use in a variety of power applications.
The working principle of the BUK7M17-80EX is similar to other MOSFETs. It consists of a silicon-based substrate and a gate layer. The gate layer is composed of a gate oxide layer and a gate contact. A voltage that is applied to the gate contact can induce a channel between the source and drain regions of the device, which is called an inversion layer. The channel is related to the breakdown voltage and can be modulated with the gate voltage. This modulated channel is responsible for conduction of the current from the source to the drain terminal. The voltage applied to the gate determines the conductivity of the current path. Thus, the BUK7M17-80EX is a voltage-controlled device which can be used to switch devices or amplify signals.
The BUK7M17-80EX is a versatile device that can be used in many different applications. It is suitable for use in high-voltage switching and amplification, PWM power supply controllers, power management, automotive power supplies, battery management and other applications. Furthermore, due to its high breakdown voltage, low on-resistance, and low gate charge, it can also be used in high-power transmission and current level setting applications.
In conclusion, the BUK7M17-80EX is a versatile vertical N-channel MOSFET that is ideal for high-voltage, high-current switching and amplification, PWM power supply controllers, power management, automotive power supplies, battery management and other applications. The device is easily controlled by varying the gate voltage, making it ideal for efficient power control needs.
The specific data is subject to PDF, and the above content is for reference
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