BUK7M19-60EX Allicdata Electronics
Allicdata Part #:

1727-2558-2-ND

Manufacturer Part#:

BUK7M19-60EX

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V MLFPAK
More Detail: N-Channel 60V 35.8A (Tc) 55W (Tc) Surface Mount LF...
DataSheet: BUK7M19-60EX datasheetBUK7M19-60EX Datasheet/PDF
Quantity: 1500
1500 +: $ 0.17243
Stock 1500Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7M19-60EX is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) belonging to the class of Single Transistors. It is designed to be a high-performance MOSFET, with excellent electrical characteristics and high reliability. Furthermore, it is designed to meet the needs of a variety of applications.

Application Field

BUK7M19-60EX is suitable for a variety of power electronics applications, such as voltage and current regulators, motor controls, lighting systems, and many other power systems. In particular, it is well-suited for use in rectifiers, which are used to convert alternating current to direct current. It is also ideal for applications that require the high efficiency and low power consumption of MOSFETs.

Working Principle

MOSFETs, such as the BUK7M19-60EX, operate on the principle of a field-effect transistor (FET) which utilizes a gate to control the current passing through a transistor. The gate is used to create an electric field, which modulates the current passing through the device. This allows for the device to be switched on or off, as well as regulating the amount of current flowing through the device.

The main difference between MOSFETs and other types of FETs, such as junction FETs, is the presence of a metal-oxide layer. This layer serves a dual purpose: it acts as an insulating layer which protects the gate, and also enhances the electric field that is created by the gate. This allows for the device to be operated with much lower power consumption than other types of FETs.

The BUK7M19-60EX is also designed to allow for fast switching speeds. The gate has a low capacitance value, which allows for quicker switching of the device. This is particularly beneficial in applications where quick response times are required.

Conclusion

In conclusion, the BUK7M19-60EX is a type of MOSFET that is suitable for a range of power electronics applications. It is designed for high performance and reliability, as well as for its low power consumption and fast switching times. Furthermore, its metal-oxide layer enhances the electric field and is what makes it particularly useful in rectifying applications.

The specific data is subject to PDF, and the above content is for reference

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