BUK7Y1R4-40HX Allicdata Electronics
Allicdata Part #:

BUK7Y1R4-40HX-ND

Manufacturer Part#:

BUK7Y1R4-40HX

Price: $ 0.77
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BUK7Y1R4-40H/SOT669/LFPAK
More Detail:
DataSheet: BUK7Y1R4-40HX datasheetBUK7Y1R4-40HX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.69471
Stock 1000Can Ship Immediately
$ 0.77
Specifications
Series: --
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: --
Supplier Device Package: --
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Description

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The BUK7Y1R4-40HX is a high-speed MOSFET Transistor (Field Effect Transistor) with exceptional performance characteristics. It is widely used in many applications ranging from consumer to military, and is the choice of many leading companies and universities. This article will discuss the application field and working principle of the BUK7Y1R4-40HX.

The BUK7Y1R4-40HX is a VDT2 (Power) transistor. This type of transistor is designed for high speed switching applications. It is an ideal choice for high frequency, high power applications such as switching power supply and motor control. The VDT2 family of transistors are the preferred choice of semiconductor manufacturers due to their superior performance and reliability compared to other transistors.

The BUK7Y1R4-40HX is a single-gate, high voltage, low on-resistance, MOSFET transistor. It is designed to operate from a single supply voltage and is capable of various operating modes such as single-ended and differential-ended operation. The device is capable of operation at very high frequencies and is optimized for off-state drain-source leakage currents of minimal amounts.

The working principle of the BUK7Y1R4-40HX is based on the concept of the Metal-Oxide-Semiconductor Field Effect (MOSFET) technology. In a MOSFET, the current flow in the device is controlled by a gate voltage applied to the gate terminal. When this gate voltage is increased, the drain current in the device increases, and vice versa. This voltage-controlled current flow is the main operating principle of the BUK7Y1R4-40HX.

The application field of the BUK7Y1R4-40HX consists of many different applications such as power conversion, motor control, computer CPUs, and photoelectric smoke detectors. In addition, the BUK7Y1R4-40HX is also used in consumer applications such as home and office appliances, consumer electronics, and even medical applications. It is also widely used in space-based applications, such as in spacecraft, satellites, and deep space probes.

Another application field where the BUK7Y1R4-40HX is widely used is in industrial automation and robotics. The excellent performance characteristics of this transistor enables it to be used in many different types of robots and automated systems. Its ability to switch very quickly makes it very ideal for controlling robotic components and systems. With its small size and reliability, the BUK7Y1R4-40HX is also widely used in industrial applications such as Material Handling, Automated Testing, and Data Acquisition, among others.

In summary, the BUK7Y1R4-40HX is a high-speed MOSFET Transistor (Field Effect Transistor) with excellent performance characteristics. It is used in many different applications, ranging from consumer to military, and is the choice of many leading companies and universities. The working principle of this device is based on the concept of the Metal-Oxide-Semiconductor Field Effect (MOSFET) technology, which makes use of a gate voltage to control the current flow in the device. It is also widely used in various application fields such as in power conversion, motor control, computer CPUs, home and office appliances, consumer electronics, and medical applications.

The specific data is subject to PDF, and the above content is for reference

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