BUK7Y25-60EX Allicdata Electronics
Allicdata Part #:

1727-1803-2-ND

Manufacturer Part#:

BUK7Y25-60EX

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 34A LFPAK
More Detail: N-Channel 60V 34A (Tc) 64W (Tc) Surface Mount LFPA...
DataSheet: BUK7Y25-60EX datasheetBUK7Y25-60EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.18130
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 64W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7Y25-60EX, also known as a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is a semiconductor device with great functionality that is capable of extremely efficient, reliable, and fast switching. It is commonly used as a switch, amplifier, and voltage regulator, among other things. Furthermore, due to its low power consumption, it is typically found in portable electronic devices such as cell phones, laptops, and tablets.The main application fields of the BUK7Y25-60EX semiconductor are primarily in the telecommunications industry. For instance, it is used in switching power supply (in high voltage applications), portable radios, high power amplifier circuits, and so on. Additionally, it is also used for power network data transfer and for direct current motor control.This N-channel MOSFET works by using a gate terminal to control a flow ofcharge carriers through a channel of semiconductor material that separates the source and drain terminals. When the gate terminal receives a small electric charge, it modifies the semiconductor channel, allowing current to flow from the source to the drain. The threshold voltage is the minimum voltage required on the gate terminal to allow the current to flow through. As the voltage on the gate terminal increases the current flowing through the N-channel MOSFET increases in an exponential manner.In addition to its low power consumption, one of the primary advantages of the BUK7Y25-60EX is its low on-resistance, which means that high currents can be handled with reasonable power dissipation. This is especially beneficial in applications such as power switching requiring high current-carrying capabilities. Furthermore, the N-channel MOSFET also has a higher voltage rating than its P-channel counterpart, meaning that it can operate at higher levels and more efficiently.The BUK7Y25-60EX N-channel MOSFET has several benefits over other types of transistors, such as its low power consumption, high current carrying capability, and high voltage ratings. Additionally, its low gate threshold voltage makes it especially useful for applications where low voltage levels are preferred. As such, it is an ideal choice for a range of applications in telecommunications, power switching, and data transmission.

The specific data is subject to PDF, and the above content is for reference

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