BUK7Y29-40EX Allicdata Electronics
Allicdata Part #:

1727-1110-2-ND

Manufacturer Part#:

BUK7Y29-40EX

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 26A LFPAK
More Detail: N-Channel 40V 26A (Tc) 37W (Tc) Surface Mount LFPA...
DataSheet: BUK7Y29-40EX datasheetBUK7Y29-40EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.15273
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7Y29-40EX transistors are a type of field-effect transistors (FETs) that employ a single layer of semiconductor material to control current. Like other types of FETs, they are operated by the application of an electric field to the gate region, resulting in an increase in current flow through the channel between the source and the drain. BUK7Y29-40EX transistors are also referred to as metal–oxide–semiconductor FETs (MOSFETs).

An important advantage of BUK7Y29-40EX MOSFETs over other FETs is their ability to operate at higher frequencies. This is due to the physical structure of the device, which consists of a single layer of conductive material deposited on the semiconductor substrate. As a result, the gate voltage can be applied more quickly than in other FETs. This allows for a faster switching speed and higher operating frequencies.

The working principle of BUK7Y29-40EX transistors relies on the electric field that is formed by the gate voltage applied to the gate region. As a result of this field, a channel of mobile charge carriers is created between the source and the drain. The amount of charge carriers in the channel is then controlled by the gate voltage. When the gate voltage increases, more charge carriers enter the channel and the resistance between the source and the drain decreases, thus increasing the flow of current.

BUK7Y29-40EX transistors are used in various applications that require fast switching and high operating frequencies. For example, they are often used in power electronics, radio-frequency (RF) circuits, and analog circuit designs. They can also be used to drive multiple loads in switching applications, such as in motor control circuits.

In addition, BUK7Y29-40EX transistors are also used in applications where low-voltage solutions are required. For instance, they are commonly used in sensors and light-emitting diodes (LEDs), where they can provide a reliable and cost-effective solution. Moreover, they are also used in communications systems, such as cell phones and Wi-Fi routers, since they provide the high-speed data required for these applications.

BUK7Y29-40EX transistors are a reliable and cost-effective solution for various applications that require fast switching and high performance. Their simple operation principle, low power consumption, and high-frequency operation make them an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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