BUK7Y3R0-40HX Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7423-2-ND |
Manufacturer Part#: |
BUK7Y3R0-40HX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 120A LFPAK56 |
More Detail: | N-Channel 40V 120A (Ta) 172W (Ta) Surface Mount LF... |
DataSheet: | BUK7Y3R0-40HX Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.6V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 172W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5449pF @ 25V |
Vgs (Max): | +20V, -10V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
?The BUK7Y3R0-40HX is part of a family of power MOSFET transistors. These transistors are used in many different types of electronic and automotive applications, including power distribution and management, motor control, onboard power management, and audio and video switching. The device is a single-N-channel enhancement MOSFET with a low on-resistance. This type of transistor is used in many high-power applications, as it can handle high voltages and current levels. The device is also often used in RF switching and analog amplifier circuits.
The BUK7Y3R0-40HX device is mainly used in high power switching applications. It can be used to switch high voltage and high current levels with just a small number of control signals. It is particularly useful in motor control applications, allowing for precise switching of high power motors. The device is also used in power distribution and management, allowing for accurate and safe switching of power and current levels.
The BUK7Y3R0-40HX is a single-N-channel enhancement MOSFET. It is an enhancement mode field effect transistor (FET), which means it is turned on by applying a voltage to its gate terminal. When the gate terminal is charged, it creates an electric field, which allows current to flow from the source to the drain. This type of FET is capable of very high on-resistance, allowing it to handle high voltages and high current levels. It is commonly used in high power switching applications.
The working principle of the BUK7Y3R0-40HX is that it is a voltage-controlled device. A voltage is applied to the gate terminal, and this creates an electric field that allows current to flow from the source to the drain, allowing the device to switch on or off, depending on the voltage level. When the voltage level is high, the MOSFET is turned on and current is allowed to flow, and when the voltage level is low, the MOSFET is turned off and the current stops flowing.
The BUK7Y3R0-40HX is primarily used in high power switching applications, but it can also be used in RF switching and analog amplifier circuits. These applications require precise switching of high power circuits, and the BUK7Y3R0-40HX is ideal for this purpose. It is also used in power distribution and management, allowing for accurate and safe switching of power and current levels. In addition, the device is commonly used in motor control applications, allowing for precise switching of high power motors.
In summary, the BUK7Y3R0-40HX is a single-N-channel enhancement MOSFET with a low on-resistance. It is used in many high-power applications, including power distribution and management, motor control, onboard power management, and audio and video switching. Its operating principle is that it is a voltage-controlled device, and it is capable of handling high voltages and current levels. It is an ideal device for high power switching applications, and it is also used in RF switching and analog amplifier circuits.
The specific data is subject to PDF, and the above content is for reference
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