Allicdata Part #: | 1727-7219-2-ND |
Manufacturer Part#: |
BUK7Y53-100B,115 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 24.8A LFPAK |
More Detail: | N-Channel 100V 24.8A (Tc) 85W (Tc) Surface Mount L... |
DataSheet: | BUK7Y53-100B,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.20124 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1467pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7Y53-100B,115 is a type of single-channel insulated-gate field effect transistor (FET) employed to switch signals or current in the operation of electronic systems. Insulated-gate FETs are differentiated from junction field effect transistors (JFETs) by their gate insulation, which allows them to operate at higher voltage levels.
An insulated-gate FET features three gate terminals which correspond to the three electrodes of the JFET, but in a different configuration. With the BUK7Y53-100B,115, the gate terminals are arranged as drain, source, and gate. The source terminal connects to the ground, while the gate terminal is connected to the power source and the drain is connected to the load circuitry. This arrangement allows for greater voltage control over the operation of the device.
The BUK7Y53-100B,115 has a voltage capability of 100V and a maximum current drain-source rating of 115A. This makes the transistor suitable for medium-power applications, such as motor speed control, motor drive circuits, and amplifying applications. The device also has a fast switching speed and low power dissipation, making it a good choice for high-speed switching applications.
The BUK7Y53-100B,115 is well-suited to applications that require precise voltage control thanks to its insulated gate FET technology. When a suitable gate voltage is applied, the device can act as an effective electronic switch, allowing electronic equipment to rapidly switch states in response to changes in the external environment. The device can also modulate power flow, allowing precise control over output current. In this way, the BUK7Y53-100B,115 can be used in power management applications, such as automatic lighting control in residential and commercial buildings.
The device’s relatively low power dissipation and fast switching speed also make it a suitable option for high-speed applications, such as communication and data processing applications. By modulating input currents at precise levels, the BUK7Y53-100B,115 can be used to transmit or receive digital signals or perform signal conditioning operations quickly. Its relatively low power dissipation also makes it a good choice for battery-operated applications.
In short, the BUK7Y53-100B,115 combines the advantages of an insulated-gate FET with the benefits of fast switching speed and low power dissipation. This makes it a good choice for a variety of medium-power and high-speed applications, from motor drive circuits to data communication systems.
The specific data is subject to PDF, and the above content is for reference
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