FDD8444L-F085 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDD8444L-F085 is a single N-channel enhancement mode power MOSFET designed specifically to improve the efficiency of designs, while maintaining the highest level of reliability and ruggedness. It is an excellent choice for applications that require superior thermal performance, such as automotive, industrial, and space power supplies. The device is housed in a hermetic TO-263 (D-Pak) package and consists of a drain source and gate terminals.

This device is an enhanced version of the popular FDD8444L-F084, offering superior performance and higher efficiency. The FDD8444L-F085 has a Drain-Source Voltage rating of 200V and provides a current rating of 8A. Its Maximum Continuous Source and Drain Current ratings are 5.0A and 4.0A, respectively. It is designed to meet the latest requirements of high-efficiency designs while offering superior thermal performance and reliability. The device is rated for operation up to 175 degrees Celsius and features a maximum drain-source resistance of only 10 milliOhm, making it an excellent choice for power conversion and power management applications.

The FDD8444L-F085 is made up of an array of MOS field-effect transistors (MOSFETs). These are insulated gate transistors that use an electric field to control the flow of current between the drain and source terminals. When voltage is applied to the gate terminal, a channel forms between the drain and source, allowing current to flow between the two terminals. If a higher voltage is applied to the gate terminal, more current is allowed to flow, and conversely, if lower voltage is applied, less current will be allowed to flow. This makes MOSFETs ideal for controlling the power output of devices such as voltage regulators, switching power supplies, and dc-to-dc converters.

Each FDD8444L-F085 MOSFET includes a source terminal that is connected internally to the drain and the gate. The source terminal is typically connected to ground potential, leaving the drain and gate terminals to be used for controlling the amount of current flowing through the device. This can be done by applying a voltage or by using a logic signal such as a PWM signal. The FDD8444L-F085 comes in the standard VDSS of 20V, making it suitable for most applications. Additionally, it features a breakdown current of 4A, a thermal resistance of 2.1°C/W, and a low on-state resistance of 10 milli Ohms.

The FDD8444L-F085 is ideally suited for use in high-efficiency designs, such as LED light drivers, DC-DC converters, motor drives, and other applications where high current and low thermal resistance is needed. It’s also an excellent choice for use in power conversion and power management applications, offering superior efficiency and reliability. The device is housed in a hermetic TO-263 package, making it easy to install and maintain. With its low on-state resistance and high continuous drain current, the FDD8444L-F085 is a great choice for any power device application.

The specific data is subject to PDF, and the above content is for reference