FDD8586 Discrete Semiconductor Products |
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Allicdata Part #: | FDD8586TR-ND |
Manufacturer Part#: |
FDD8586 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 35A DPAK |
More Detail: | N-Channel 20V 35A (Tc) 77W (Tc) Surface Mount TO-2... |
DataSheet: | FDD8586 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2480pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 77W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FDD8586 Application Field and Working Principle
The FDD8586 is a type of Field Effect Transistor (FET). FETs are commonly used in applications that require the control of current or open-loop devices. The FDD8586 is a single-pole, normally-on MOSFET that switches low voltage and current from the main power rail.
The FDD8586 application field includes industrial, commercial, automotive, and medical electronics, where it can be used for motor control, power supply, audio amplifiers, and other devices that require low power and low voltage switching. The FDD8586 also has applications in robotics, robotics amplifiers, and other low voltage applications. Its low power makes it suitable for battery-operated devices, as it has a very low standby power consumption.
Working Principle of the FDD8586
The FDD8586 is an N-type MOSFET, with a single-gate structure. When the gate is biased with a positive voltage, the FDD8586 switches “on”, opening the passage of current from the drain to the source. Conversely, if the gate is biased with a negative voltage, the FDD8586 will switch “off”, blocking the passage of current from the drain to the source. This action is attributed to the depletion layer (formed between the p-type and n-type semiconductors), which acts as an electrical barrier for current flowing in a certain direction.
The FDD8586 does not have an internal resistance, this makes it an ideal choice for high-efficiency systems. Furthermore, the FDD8586 features a high on-resistance (when the switch is on). This makes it suitable for applications such as volume control, motors, and other devices that require precise adjustment of the electrical current.
In addition, the FDD8586 is immune to electromagnetic interference and can operate at high frequencies. It also has a wide temperature range, up to -135°C to +175°C for some models. Thanks to its low power requirements, the FDD8586 is also suitable for automotive and medical electronics, as well as other battery-powered applications.
Conclusion
The FDD8586 field effect transistor is a type of single-pole, normally-on MOSFET that switches low voltage and current from the main power rail. It is commonly used in different kinds of industrial, commercial, automotive, and medical electronics, where it can be used for various tasks such as motor control, power supply, audio amplifiers, and other devices that require low power and low voltage switching. The FDD8586 is immune to electromagnetic interference, has a high on-resistance, and can operate at high frequencies. Its low power requirements, wide temperature range, and lack of an internal resistance make it an ideal choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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