FDD8586 Allicdata Electronics

FDD8586 Discrete Semiconductor Products

Allicdata Part #:

FDD8586TR-ND

Manufacturer Part#:

FDD8586

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 35A DPAK
More Detail: N-Channel 20V 35A (Tc) 77W (Tc) Surface Mount TO-2...
DataSheet: FDD8586 datasheetFDD8586 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
FET Feature: --
Power Dissipation (Max): 77W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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FDD8586 Application Field and Working Principle

The FDD8586 is a type of Field Effect Transistor (FET). FETs are commonly used in applications that require the control of current or open-loop devices. The FDD8586 is a single-pole, normally-on MOSFET that switches low voltage and current from the main power rail.

The FDD8586 application field includes industrial, commercial, automotive, and medical electronics, where it can be used for motor control, power supply, audio amplifiers, and other devices that require low power and low voltage switching. The FDD8586 also has applications in robotics, robotics amplifiers, and other low voltage applications. Its low power makes it suitable for battery-operated devices, as it has a very low standby power consumption.

Working Principle of the FDD8586

The FDD8586 is an N-type MOSFET, with a single-gate structure. When the gate is biased with a positive voltage, the FDD8586 switches “on”, opening the passage of current from the drain to the source. Conversely, if the gate is biased with a negative voltage, the FDD8586 will switch “off”, blocking the passage of current from the drain to the source. This action is attributed to the depletion layer (formed between the p-type and n-type semiconductors), which acts as an electrical barrier for current flowing in a certain direction.

The FDD8586 does not have an internal resistance, this makes it an ideal choice for high-efficiency systems. Furthermore, the FDD8586 features a high on-resistance (when the switch is on). This makes it suitable for applications such as volume control, motors, and other devices that require precise adjustment of the electrical current.

In addition, the FDD8586 is immune to electromagnetic interference and can operate at high frequencies. It also has a wide temperature range, up to -135°C to +175°C for some models. Thanks to its low power requirements, the FDD8586 is also suitable for automotive and medical electronics, as well as other battery-powered applications.

Conclusion

The FDD8586 field effect transistor is a type of single-pole, normally-on MOSFET that switches low voltage and current from the main power rail. It is commonly used in different kinds of industrial, commercial, automotive, and medical electronics, where it can be used for various tasks such as motor control, power supply, audio amplifiers, and other devices that require low power and low voltage switching. The FDD8586 is immune to electromagnetic interference, has a high on-resistance, and can operate at high frequencies. Its low power requirements, wide temperature range, and lack of an internal resistance make it an ideal choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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