FDD86369-F085 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2530pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	7.9 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDD86369-F085 is a P-channel enhancement mode Field Effect Transistor (FET). It is utilized in circuits involving low voltage logic, low power switching and protection applications. This high performance device features low on-state resistance, fast switching speed and high breakdown voltage. It is constructed with a silicon channel in a hermetically sealed leaded package with planar technology to minimize parasitic effects.

Application Field

FDD86369-F085 FETs are useful in a variety of applications which require low voltage switching, low power protection, and low voltage logic circuitry. Common applications include motor control, audio amplifiers, protection circuits, voltage regulator, interfacing logic circuits, low power switching, low power gate drive, power gate, and power gate control. It is also frequently used in communication signals for its ability to maintain a low on-state resistance and fast switching speed.

Working Principle

Field-Effect Transistors, including the FDD86369-F085, are solid-state devices that are used to amplify and switch electronic signals. FETs are unipolar devices, meaning that they only allow electrical current to flow in one direction. The P-channel FET operates by utilizing the gate terminal to control the current flow from source to drain. When the device is not conducting, the gate terminal is held at a voltage above the source voltage. This creates an inverse electric field in the semiconductor allowing the drain current to flow. When the gate voltage is equal or below the source voltage, the inverse electric field created is not strong enough to support the current flow and the drain current is blocked.The advantages of P-channel FETs compared to bipolar transistors is that the gate voltage can be controlled by either a low state or high state and it provides fast switching times due to the low capacitance between the gate and drain terminals. Additionally, their construction is simpler which results in less power loss compared to other transistor types.

Features

The FDD86369-F085 FET is an enhancement mode device with a P-channel and ensures high performance switching due to its low on-state resistance. It has a total gate charge of just 12 nC and an effective typical turn-on charge of just 8 nC. It also allows for fast switching times due to the low capacitance between the gate and drain terminals. This FET also offers high breakdown voltage of up to 80V and a continuous drain current of 4A. It is also constructed with a hermetically sealed leaded package designed to minimize parasitic effects. Standard packages come in SOT-23, TO-220, SOT-223 and TO-252 configurations.

Conclusion

The FDD86369-F085 FET is an ideal choice for applications such as motor control, audio amplifier, protection circuits, voltage regulator, low power switching, low power gate drive, power gate, and power gate control. It features a low on-state resistance, high breakdown voltage, fast switching speed, and hermetically sealed leaded package design. The FDD86369-F085 is a highly dependable device for a variety of low voltage applications.

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