FDD86367-F085

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The FDD86367-F085 is a N-Channel MOSFET that is commonly used in power control applications. It is used to control the current flow of the circuit and is designed to be used with a wide range of voltages and current ratings. This device is often used in a variety of electronic applications, including automotive, power distribution, military, audio, and communication equipment.

The FDD86367-F085 is a relatively large MOSFET and is made up of several components. The core of the device is the N-Channel metal-oxide-semiconductor field effect transistor (MOSFET). This is a four-terminal device, with two source terminals and two drain terminals. The gate and drain terminals are connected to form a single junction, creating a field-effect transistor (FET) structure, which can control the drain current.

The components of the FDD86367-F085 are designed to have an insulated gate terminal, which increases the switching speed of the device and reduces the power consumption of the circuit.The gate has a gate-to-source capacitance and gate-to-drain capacitance which are used to control the amount of current flowing through the device when the MOSFET is turned on. This is done by applying a voltage between the gate voltage and the drain voltage, which controls the channel conductivity, and thus the drain current.

The FDD86367-F085 has a low on-state resistance, which allows it to be used in applications requiring high current loads, such as automotive and military DC motors. The on-state resistance is typically less than several milliohms. The device also has a maximum drain current rating of 24A and a maximum drain voltage of 200V. The device can handle power dissipation up to 225W.

The FDD86367-F085 is widely used in a variety of power control applications, including in switching power supplies, brushless direct current motors, and motor drives. It can be used to switch high power devices, such as motors, relays, and lights. It can also be used in DC-DC converters, uninterruptible power supplies, and in battery charging applications.

The working principle of the FDD86367-F085 is relatively simple. When the applied voltage on the drain is higher than the gate voltage, the transistor is said to be "on." This allows the current to flow from the source to the drain. The amount of current that can be controlled by the FDD86367-F085 depends on the applied voltage, the size of the channel, and the gate voltage.

When the applied voltage on the gate is higher than the drain voltage, the transistor is said to be "off." In this state, the source and the drain are disconnected, causing no current to flow between the two terminals. By controlling the voltage applied to the gate, the current can be regulated through the FDD86367-F085.

In summary, the FDD86367-F085 is a N-Channel MOSFET that is used for controlling current flow in a range of applications. Its insulated gate terminal increases its switching speed, while its low on-state resistance allows for the flow of high currents. The device can be used in high power applications, as well as in switching power supplies, brushless motors, and DC-DC converters. The working principle of the device is based on the applied voltage on the gate and drain, which controls the channel conductivity, and thus the drain current.

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