Allicdata Part #: | FDD8647LTR-ND |
Manufacturer Part#: |
FDD8647L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 14A DPAK |
More Detail: | N-Channel 40V 14A (Ta), 42A (Tc) 3.1W (Ta), 43W (T... |
DataSheet: | FDD8647L Datasheet/PDF |
Quantity: | 10000 |
Specifications
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 43W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
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The FDD8647L is a component that belongs to the group of transistors, field effect transistors, and single “n-channel” MOSFETs (metal oxide semiconductor FET). This component can be used in many fields, both industrial and domestic, due to its versatility and low cost. In this article, we will analyze its application field and explore the working principle.First of all, let’s explore the application fields of FDD8647L. This component is often used in high-current applications for their efficient and reliable performance. It is commonly used in a wide range of devices, from power converters and power supplies, to audio amplifiers, heating systems and more. Also, due to its low cost and low power consumption, FDD8647L can be employed in any product where energy efficiency is paramount.Another important application of FDD8647L is in communication networks, mostly for switching and power amplification. In such cases, FDD8647L can be combined with other components such as signal converters, signal processors, and logic gates. This allows for the design of efficient and reliable communication networks with better speed and efficiency.Moreover, FDD8647L features low leakage current and high temperature operating range, making it suitable for operating in extreme environmental conditions. Among other application fields associated with FDD8647L include computer memory and CPU protection circuits, medical imaging systems, and automobile lighting systems.Now, let’s take a look at the working principle behind FDD8647L. In essence, FDD8647L acts as a voltage driven barrier between source and drain. This barrier, when a constant voltage is applied, provides a variable resistance usually referred as RDSon. This variable resistance, which is always lower than a static Ohmic resistance, is key in obtaining current control, as the higher the applied voltage, the lower the RDSon resistance.Moreover, FDD8647L behaves like a “normally open” switch. This means that when zero voltage is applied, the switch it’s open, meaning that no current passes through the component. On the other hand, when the desired voltage is applied, the switch is closed and the current starts to pass. This is the essential concept of “on/off” MOSFETs.In summary, FDD8647L is a highly versatile component that can be used for quite a few applications. Its low cost, energy efficiency and ability to be used in extreme environmental conditions are among its many advantages. Also, due to its simple design and working principle, it can be easily understood and implemented. All these facts make FDD8647L a key component for many industrial and domestic applications.
The specific data is subject to PDF, and the above content is for reference
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